Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array
Chao, Tzu‐Ang, Chuu, Chih‐Piao, Liew, San‐Lin, Hu, I‐Fan, Su, Sheng‐Kai, Li, Shengman, Lin, Shih‐Chu, Hou, Vincent D.‐H., Wong, H.‐S. Philip, Radu, Iuliana, Chang, Wen‐Hao, Pitner, Gregory, Wang, Han
Published in Advanced materials interfaces (01.02.2024)
Published in Advanced materials interfaces (01.02.2024)
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Journal Article
Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors
Chiu, Hsin‐Yuan, Chao, Tzu‐Ang, Safron, Nathaniel S., Su, Sheng‐Kai, Liew, San‐Lin, Yun, Wei‐Sheng, Mao, Po‐Sen, Lin, Yu‐Tung, Hou, Vincent Duen‐Huei, Lee, Tung‐Ying, Chang, Wen‐Hao, Passlack, Matthias, Wong, Hon‐Sum Philip, Radu, Iuliana P., Wang, Han, Pitner, Gregory, Chien, Chao‐Hsin
Published in Advanced electronic materials (01.03.2024)
Published in Advanced electronic materials (01.03.2024)
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Journal Article
Building high performance transistors on carbon nanotube channel
Pitner, Gregory, Safron, Nathaniel, Chao, Tzu-Ang, Li, Shengman, Su, Sheng-Kai, Zeevi, Gilad, Lin, Qing, Chiu, Hsin-Yuan, Passlack, Matthias, Zhang, Zichen, Sathaiya, D. Mahaveer, Wei, Aslan, Gilardi, Carlo, Chen, Edward, Liew, San-Lin, Hou, Vincent D.-H., Wu, Chung-Wei, Wu, Jeff, Lin, Zhiwei, Fagan, Jeffrey, Zheng, Ming, Wang, Han, Mitra, Subhasish, Philip Wong, H.-S., Radu, Iuliana
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts
Chou, Ang-Sheng, Cheng, Chao-Ching, Liew, San-Lin, Ho, Po-Hsun, Wang, Shih-Yun, Chang, Yu-Chen, Chang, Che-Kang, Su, Yuan-Chun, Huang, Zheng-Da, Fu, Fang-Yu, Hsu, Chen-Feng, Chung, Yun-Yan, Chang, Wen-Hao, Li, Lain-Jong, Wu, Chih-I
Published in IEEE electron device letters (01.02.2021)
Published in IEEE electron device letters (01.02.2021)
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Journal Article
Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors
Huang, Fei, Passlack, Matthias, Liew, San Lin, Yu, Zhouchangwan, Lin, Qing, Babadi, Aein, Hou, Vincent D.-H., McIntyre, Paul C., Wong, S. Simon
Published in IEEE electron device letters (01.02.2022)
Published in IEEE electron device letters (01.02.2022)
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Journal Article
High-performance monolayer MoS2 nanosheet GAA transistor
Chou, Bo-Jhih, Chung, Yun-Yan, Yun, Wei-Sheng, Hsu, Chen-Feng, Li, Ming-Yang, Su, Sheng-Kai, Liew, San-Lin, Hou, Vincent Duen-Huei, Chen, Chien-Wei, Kei, Chi-Chung, Shen, Yun-Yang, Chang, Wen-Hao, Lee, T Y, Cheng, Chao-Ching, Radu, Iuliana P, Chien, Chao-Hsin
Published in Nanotechnology (18.03.2024)
Published in Nanotechnology (18.03.2024)
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Journal Article
Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors
Wu, Wen-Chia, Hung, Terry Y. T., Sathaiya, D. Mahaveer, Arutchelvan, Goutham, Hsu, Chen-Feng, Su, Sheng-Kai, Chou, Ang Sheng, Chen, Edward, Shen, Yun-Yang, Liew, San Lin, Hou, Vincent, Lee, T. Y., Cai, Jin, Wu, Chung-Cheng, Wu, Jeff, Wong, H.-S. Philip, Cheng, Chao-Ching, Chang, Wen-Hao, Radu, Iuliana P., Chien, Chao-Hsin
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
High-Performance Monolayer WSe2 p/n FETs via Antimony-Platinum Modulated Contact Technology towards 2D CMOS Electronics
Chou, Ang-Sheng, Lin, Yu-Tung, Lin, Yuxuan Cosmi, Hsu, Ching-Hao, Li, Ming-Yang, Liew, San-Lin, Chou, Sui-An, Chen, Hung-Yu, Chiu, Hsin-Yuan, Ho, Po-Hsun, Hsu, Ming-Chun, Hsu, Yu-Wei, Yang, Ning, Woon, Wei-Yen, Liao, Szuya, Hou, Duen-Huei, Chien, Chao-Hsin, Chang, Wen-Hao, Radu, Iuliana, Wu, Chih-I, Philip Wong, H.-S., Wang, Han
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
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Conference Proceeding
Computational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFETs
Yang, Ning, Lin, Yuxuan Cosmi, Chuu, Chih-Piao, Rahman, Saifur, Wu, Tong, Chou, Ang-Sheng, Liew, San-Lin, Fujiwara, Kohei, Chen, Hung-Yu, Ikeda, Junya, Tsukazaki, Atsushi, Hou, Duen-Huei, Woon, Wei-Yen, Liao, Szuya, Huang, Shengxi, Qian, Xiaofeng, Guo, Jing, Radu, Iuliana, Philip Wong, H.-S., Wang, Han
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
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Conference Proceeding
Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping
Safron, Nathaniel, Chiu, Hsin-Yuan, Chao, Tzu-Ang, Su, Sheng-Kai, Passlack, Matthias, Chiu, Kuang-Hsiang, Chen, Chien-Wei, Kei, Chi-Chung, Chou, Chen-Han, Lee, Tsung-En, Wang, Jer-Fu, Chang, Chih-Sheng, Liew, San-Lin, Hou, Vincent D- H., Wang, Han, Chang, Wen-Hao, Wong, H.-S. Philip, Pitner, Gregory, Chien, Chao-Hsin, Radu, Iuliana P.
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
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Conference Proceeding
Scaled contact length with low contact resistance in monolayer 2D channel transistors
Wu, Wen-Chia, Hung, Terry Y.T., Sathaiya, D. Mahaveer, Fan, Dongxu, Arutchelvan, Goutham, Hsu, Chen-Feng, Su, Sheng-Kai, Chou, Ang Sheng, Chen, Edward, Li, Weisheng, Yu, Zhihao, Qiu, Hao, Yang, Ying-Mei, Lin, Kuang-I, Shen, Yun-Yang, Chang, Wen-Hao, Liew, San Lin, Hou, Vincent, Cai, Jin, Wu, Chung-Cheng, Wu, Jeff, Philip Wong, H.-S., Wang, Xinran, Chien, Chao-Hsin, Cheng, Chao-Ching, Radu, Iuliana P.
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2D Electronics
Chou, Ang-Sheng, Wu, Tong, Cheng, Chao-Ching, Zhan, Shun-Siang, Ni, I-Chih, Wang, Shih-Yun, Chang, Yu-Chen, Liew, San-Lin, Chen, Edward, Chang, Wen-Hao, Wu, Chih-I, Cai, Jin, Wong, H.-S. Philip, Wang, Han
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
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Conference Proceeding
Area-Selective Growth of Two-Dimensional Mono- And Bilayer WS2 for Field Effect Transistors
Huang, Lin-Yun, Li, Ming-Yang, Liew, San-Lin, Lin, Shih-Chu, Chou, Ang-Sheng, Hsu, Ming-Chun, Hsu, Ching-Hao, Lin, Yu-Tung, Mao, Po-Sen, Hou, Duen-Huei, Liu, Wei-Cheng, Wu, Chih-I, Chang, Wen-Hao, Wang, Han, Li, Lain-Jong, Wei, Kung-Hwa
Published in ACS materials letters (05.06.2023)
Published in ACS materials letters (05.06.2023)
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Journal Article
Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact
Chung, Yun-Yan, Yun, Wei-Sheng, Chou, Bo-Jhih, Hsu, Chen-Feng, Yu, Shao-Ming, Arutchelvan, G., Li, Ming-Yang, Lee, Tsung-En, Lin, Bo-Jiun, Li, Chen-Yi, Wei, Aslan, Sathaiya, D. Mahaveer, Chung, Cheng-Ting, Liew, San-Lin, Hou, Vincent D.-H., Chang, Wen-Hao, Liu, Bo-Heng, Chen, Chien-Wei, Su, Chien-Ying, Kei, Chi-Chung, Cai, Jin, Wu, Chung-Cheng, Wu, Jeff, Lee, Tung-Ying, Chien, Chao-Hsin, Cheng, Chao-Ching, Radu, Iuliana P.
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
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Conference Proceeding
pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping
Hung, Terry Y.T., Li, Meng-Zhan, Yun, Wei Sheng, Chou, Sui An, Su, Sheng-Kai, Chen, Edward, Liew, San Lin, Yang, Ying-Mei, Lin, Kuang-I, Hou, Vincent, Lee, T.Y., Wang, Han, Cheng, Albert, Lin, Minn-Tsong, Wong, H.-S. Philip, Radu, Iuliana P.
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
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Conference Proceeding
Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2
Sun, Zheng, Pang, Chin-Sheng, Wu, Peng, Hung, Terry Y.T., Li, Ming-Yang, Liew, San Lin, Cheng, Chao-Ching, Wang, Han, Wong, H.-S. Philip, Li, Lain-Jong, Radu, Iuliana, Chen, Zhihong, Appenzeller, Joerg
Published in ACS nano (27.09.2022)
Published in ACS nano (27.09.2022)
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Journal Article
Antimony–Platinum Modulated Contact Enabling Majority Carrier Polarity Selection on a Monolayer Tungsten Diselenide Channel
Lin, Yu-Tung, Hsu, Ching-Hao, Chou, Ang-Sheng, Fong, Zi-Yun, Chuu, Chih-Piao, Chang, Shu-Jui, Hsu, Yu-Wei, Chou, Sui-An, Liew, San Lin, Chiu, Ting-Ying, Hou, Fa-Rong, Ni, I-Chih, Hou, Duen-Huei Vincent, Cheng, Chao-Ching, Radu, Iuliana P., Wu, Chih-I
Published in Nano letters (24.07.2024)
Published in Nano letters (24.07.2024)
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Journal Article
Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf 0.5 Zr 0.5 O 2 /Metal Capacitors
Huang, Fei, Passlack, Matthias, Liew, San Lin, Yu, Zhouchangwan, Lin, Qing, Babadi, Aein, Hou, Vincent D.-H., McIntyre, Paul C., Wong, S. Simon
Published in IEEE electron device letters (01.02.2022)
Published in IEEE electron device letters (01.02.2022)
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Journal Article
Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS 2
Sun, Zheng, Pang, Chin-Sheng, Wu, Peng, Hung, Terry Y.T., Li, Ming-Yang, Liew, San Lin, Cheng, Chao-Ching, Wang, Han, Wong, H.-S. Philip, Li, Lain-Jong, Radu, Iuliana, Chen, Zhihong, Appenzeller, Joerg
Published in ACS nano (27.09.2022)
Published in ACS nano (27.09.2022)
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Journal Article
High-performance monolayer MoS 2 nanosheet GAA transistor
Chou, Bo-Jhih, Chung, Yun-Yan, Yun, Wei-Sheng, Hsu, Chen-Feng, Li, Ming-Yang, Su, Sheng-Kai, Liew, San-Lin, Hou, Vincent Duen-Huei, Chen, Chien-Wei, Kei, Chi-Chung, Shen, Yun-Yang, Chang, Wen-Hao, Lee, T Y, Cheng, Chao-Ching, Radu, Iuliana P, Chien, Chao-Hsin
Published in Nanotechnology (18.03.2024)
Published in Nanotechnology (18.03.2024)
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Journal Article