High breakdown electric field in \text}\text}\text/\text dielectric stack formed on (010) \beta-Ga2O3 substrates
Miesle, A., Islam, A.E., Shin, E., Subramanyam, G., Leedy, K.D., Ganguli, S., Dryden, D.M., Liddy, K.J., Chabak, K.D., Green, A.J.
Published in 2023 Device Research Conference (DRC) (25.06.2023)
Published in 2023 Device Research Conference (DRC) (25.06.2023)
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Conference Proceeding
Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealing
Islam, A.E., Leedy, K.D., Moser, N.A., Ganguli, S., Liddy, K.J., Green, A.J., Chabak, K.D.
Published in 2021 Device Research Conference (DRC) (20.06.2021)
Published in 2021 Device Research Conference (DRC) (20.06.2021)
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Conference Proceeding
Thermal stability of ALD-grown SiO2 and Al2O3 on (010) β-Ga2O3 substrates
Islam, A.E., Miesle, A., Dietz, M., Leedy, K.D., Ganguli, S., Subramanyam, G., Wang, W., Sepelak, N., Dryden, D., Tetlak, S., Liddy, K.J., Green, A.J., Chabak, K.D.
Published in 2022 Device Research Conference (DRC) (26.06.2022)
Published in 2022 Device Research Conference (DRC) (26.06.2022)
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Conference Proceeding