Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide
Kwon, Daewoong, Cheema, Suraj, Shanker, Nirmaan, Chatterjee, Korok, Liao, Yu-Hung, Tan, Ava J., Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.06.2019)
Published in IEEE electron device letters (01.06.2019)
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Journal Article
Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs
Hoffmann, Michael, Tan, Ava Jiang, Shanker, Nirmaan, Liao, Yu-Hung, Wang, Li-Chen, Bae, Jong-Ho, Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.05.2022)
Published in IEEE electron device letters (01.05.2022)
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Journal Article
Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack
Kwon, Daewoong, Cheema, Suraj, Lin, Yen-Kai, Liao, Yu-Hung, Chatterjee, Korok, Tan, Ava J., Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.01.2020)
Published in IEEE electron device letters (01.01.2020)
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Journal Article
Analysis and Modeling of Inner Fringing Field Effect on Negative Capacitance FinFETs
Lin, Yen-Kai, Agarwal, Harshit, Kushwaha, Pragya, Kao, Ming-Yen, Liao, Yu-Hung, Chatterjee, Korok, Salahuddin, Sayeef, Hu, Chenming
Published in IEEE transactions on electron devices (01.04.2019)
Published in IEEE transactions on electron devices (01.04.2019)
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Journal Article
Dynamical Effects of Excess Carriers on SOI FeFET Memory Device Operations
Hsia, Jung-Han, Liao, Yu-Hung, Ramachandran, Neelesh, Salahuddin, Sayeef
Published in IEEE transactions on electron devices (01.11.2022)
Published in IEEE transactions on electron devices (01.11.2022)
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Journal Article
Spacer Engineering in Negative Capacitance FinFETs
Lin, Yen-Kai, Agarwal, Harshit, Kao, Ming-Yen, Zhou, Jiuren, Liao, Yu-Hung, Dasgupta, Avirup, Kushwaha, Pragya, Salahuddin, Sayeef, Hu, Chenming
Published in IEEE electron device letters (01.06.2019)
Published in IEEE electron device letters (01.06.2019)
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Journal Article
Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics
Hoffmann, Michael, Tan, Ava Jiang, Shanker, Nirmaan, Liao, Yu-Hung, Wang, Li-Chen, Bae, Jong-Ho, Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.12.2022)
Published in IEEE electron device letters (01.12.2022)
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Journal Article
Energy Storage and Reuse in Negative Capacitance
Kao, Ming-Yen, Liao, Yu-Hung, Pahwa, Girish, Dasgupta, Avirup, Salahuddin, Sayeef, Hu, Chenming
Published in IEEE transactions on electron devices (01.04.2021)
Published in IEEE transactions on electron devices (01.04.2021)
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Journal Article
Anomalously Beneficial Gate-Length Scaling Trend of Negative Capacitance Transistors
Liao, Yu-Hung, Kwon, Daewoong, Lin, Yen-Kai, Tan, Ava J., Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.11.2019)
Published in IEEE electron device letters (01.11.2019)
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Journal Article
Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly Along the Channel
Kao, Ming-Yen, Lin, Yen-Kai, Agarwal, Harshit, Liao, Yu-Hung, Kushwaha, Pragya, Dasgupta, Avirup, Salahuddin, Sayeef, Hu, Chenming
Published in IEEE electron device letters (01.05.2019)
Published in IEEE electron device letters (01.05.2019)
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Journal Article
2,4,6-Trinitrotoluene Induces Apoptosis via ROS-Regulated Mitochondrial Dysfunction and Endoplasmic Reticulum Stress in HepG2 and Hep3B Cells
Liao, Hung-Yu, Kao, Chih-Ming, Yao, Chao-Ling, Chiu, Po-Wei, Yao, Chun-Chen, Chen, Ssu-Ching
Published in Scientific reports (15.08.2017)
Published in Scientific reports (15.08.2017)
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Journal Article
Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor
Kao, Ming-Yen, Sachid, Angada B., Lin, Yen-Kai, Liao, Yu-Hung, Agarwal, Harshit, Kushwaha, Pragya, Duarte, Juan Pablo, Chang, Huan-Lin, Salahuddin, Sayeef, Hu, Chenming
Published in IEEE transactions on electron devices (01.10.2018)
Published in IEEE transactions on electron devices (01.10.2018)
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Journal Article
NCFET Design Considering Maximum Interface Electric Field
Agarwal, Harshit, Kushwaha, Pragya, Lin, Yen-Kai, Kao, Ming-Yen, Liao, Yu-Hung, Duarte, Juan-Pablo, Salahuddin, Sayeef, Hu, Chenming
Published in IEEE electron device letters (01.08.2018)
Published in IEEE electron device letters (01.08.2018)
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Journal Article
Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET
Liao, Yu-Hung, Kwon, Daewoong, Cheema, Suraj, Shanker, Nirmaan, Tan, Ava J., Kao, Ming-Yen, Wang, Li-Chen, Hu, Chenming, Salahuddin, Sayeef
Published in IEEE transactions on electron devices (01.03.2021)
Published in IEEE transactions on electron devices (01.03.2021)
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Journal Article
Diet regulates membrane extension and survival of niche escort cells for germline homeostasis via insulin signaling
Su, Yu-Han, Rastegri, Elham, Kao, Shih-Han, Lai, Chun-Min, Lin, Kun-Yang, Liao, Hung-Yu, Wang, Mu-Hsiang, Hsu, Hwei-Jan
Published in Development (Cambridge) (01.04.2018)
Published in Development (Cambridge) (01.04.2018)
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Journal Article
Transcriptome analysis of zebrafish embryos exposed to deltamethrin
Chueh, Tsung‐Cheng, Hsu, Li‐Sung, Kao, Chin‐Ming, Hsu, Tung‐Wei, Liao, Hung‐Yu, Wang, Kuan‐Yi, Chen, Ssu Ching
Published in Environmental toxicology (01.05.2017)
Published in Environmental toxicology (01.05.2017)
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Journal Article
Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET
Tan, Ava J., Wang, Li-Chen, Liao, Yu-Hung, Bae, Jong-Ho, Hu, Chenming, Salahuddin, Sayeef
Published in 2020 Device Research Conference (DRC) (01.06.2020)
Published in 2020 Device Research Conference (DRC) (01.06.2020)
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