First Demonstration of Ferroelectric Tunnel Thin-Film Transistor Nonvolatile Memory With Polycrystalline-Silicon Channel and HfZrO } Gate Dielectric
Ma, William Cheng-Yu, Su, Chun-Jung, Kao, Kuo-Hsing, Lee, Yao-Jen, Lin, Ju-Heng, Wu, Pin-Hua, Chang, Jui-Che, Yen, Cheng-Lun, Tseng, Hsin-Chun, Liao, Hsu-Tang, Chou, Yu-Wen, Chiu, Min-Yu, Chen, Yan-Qing
Published in IEEE transactions on electron devices (01.11.2022)
Published in IEEE transactions on electron devices (01.11.2022)
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Journal Article
Impacts of pulse conditions on endurance behavior of ferroelectric thin-film transistor non-volatile memory
Ma, William Cheng-Yu, Su, Chun-Jung, Kao, Kuo-Hsing, Lee, Yao-Jen, Wu, Pin-Hua, Tseng, Hsin-Chun, Liao, Hsu-Tang, Chou, Yu-Wen, Chiu, Min-Yu, Chen, Yan-Qing
Published in Semiconductor science and technology (01.03.2023)
Published in Semiconductor science and technology (01.03.2023)
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Journal Article