Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement
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Published in Micromachines (Basel) (27.07.2024)
Published in Micromachines (Basel) (27.07.2024)
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Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure
Liu, Honghui, Liang, Zhiwen, Wang, Fengge, Xu, Yanyan, Yang, Xien, Liang, Yisheng, Li, Xin, Lin, Lizhang, Wu, Zhisheng, Liu, Yang, Zhang, Baijun
Published in Frontiers in physics (21.11.2022)
Published in Frontiers in physics (21.11.2022)
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Comparative study of epitaxial growth and Ni/GaN Schottky device on patterned sapphire substrates
Liang, Zhiwen, Zhang, Neng, Wang, Fengge, Xu, Yanyan, Yang, Xien, Liang, Yisheng, Li, Xin, Liu, Zenghui, Lin, Lizhang, Zhang, Baijun
Published in CrystEngComm (05.02.2024)
Published in CrystEngComm (05.02.2024)
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Effects of contactless photoelectrochemical reaction on repair of etching damage in GaN SBD
Li, Xin, Liang, Zhiwen, Wang, Fengge, Xu, Yanyan, Liu, Zenghui, Liang, Yisheng, Lin, Lizhang, Zhang, Baijun
Published in Materials science in semiconductor processing (15.11.2024)
Published in Materials science in semiconductor processing (15.11.2024)
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Monolithic integrated GaN-based 120 GHz frequency doubler on sapphire
Liang, Zhiwen, Liu, Honghui, Meng, Jin, Li, Yuhang, Wang, Fengge, Xu, Yanyan, Yang, Xien, Liang, Yisheng, Li, Xin, Lin, Lizhang, Wu, Zhisheng, Liu, Yang, Zhang, Dehai, Zhang, Baijun
Published in Journal of physics. D, Applied physics (19.10.2023)
Published in Journal of physics. D, Applied physics (19.10.2023)
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Evaluation of the impact of CO2 geological storage on tight oil reservoir properties
Dai, Yuting, Lai, Fengpeng, Ni, Jun, Liang, Yisheng, Shi, Hao, Shi, Gongshuai
Published in Journal of petroleum science & engineering (01.05.2022)
Published in Journal of petroleum science & engineering (01.05.2022)
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