Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
Li, Zhicong (志聪 李), Li, Panpan (盼盼 李), Wang, Bing (兵王), Li, Hongjian (鸿渐 李), Liang, Meng (萌梁), Yao, Ran (然姚), Li, Jing (璟李), Deng, Yuanming (元明 邓), Yi, Xiaoyan (晓燕 伊), Wang, Guohong (国宏 王), Li, Jinmin (晋闽 李)
Published in Journal of semiconductors (01.11.2011)
Published in Journal of semiconductors (01.11.2011)
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