Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric
Li, Chen-Chien, Chang-Liao, Kuei-Shu, Chi, Wei-Fong, Li, Mong-Chi, Chen, Ting-Chun, Su, Tzu-Hsiang, Chang, Yu-Wei, Tsai, Chia-Chi, Liu, Li-Jung, Fu, Chung-Hao, Lu, Chun-Chang
Published in IEEE electron device letters (01.01.2016)
Published in IEEE electron device letters (01.01.2016)
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Journal Article
An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer
Fu, Chung-Hao, Chang-Liao, Kuei-Shu, Liu, Li-Jung, Li, Chen-Chien, Chen, Ting-Ching, Cheng, Jen-Wei, Lu, Chun-Chang
Published in IEEE transactions on electron devices (01.08.2014)
Published in IEEE transactions on electron devices (01.08.2014)
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Journal Article
Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel
Fu, Chung-Hao, Chang-Liao, Kuei-Shu, Liu, Li-Jung, Hsieh, Hsiao-Chi, Lu, Chun-Chang, Li, Chen-Chien, Wang, Tien-Ko, Heh, Da-Wei
Published in IEEE electron device letters (01.02.2012)
Published in IEEE electron device letters (01.02.2012)
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Journal Article
Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in HfGeOx Interfacial Layer Formed by In Situ Desorption
LI, Chen-Chien, CHANG-LIAO, Kuei-Shu, LIU, Li-Jung, LEE, Tzu-Min, FU, Chung-Hao, CHEN, Ting-Ching, CHENG, Jen-Wei, LU, Chun-Chang, WANG, Tien-Ko
Published in IEEE electron device letters (01.05.2014)
Published in IEEE electron device letters (01.05.2014)
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Journal Article
Enhanced Programming and Erasing Speeds of Charge-Trapping Flash Memory Device With Ge Channel
Ye, Zong-Hao, Chang-Liao, Kuei-Shu, Liu, Li-Jung, Cheng, Jen-Wei, Fang, Hsin-Kai
Published in IEEE electron device letters (01.12.2015)
Published in IEEE electron device letters (01.12.2015)
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Journal Article
The structural transition from epitaxial Fe/Pt multilayers to an ordered FePt film using low energy ion beam sputtering deposition with no buffer layer
Lee, Chih-Hao, Chen, Yu-Sheng, Liu, Li-Jung, Huang, J.C.A.
Published in Thin solid films (03.11.2014)
Published in Thin solid films (03.11.2014)
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Journal Article
Conference Proceeding
Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection
Liu, Li-Jung, Chang-Liao, Kuei-Shu, Jian, Yi-Chuen, Wang, Tien-Ko, Tsai, Ming-Jinn
Published in Thin solid films (30.04.2013)
Published in Thin solid films (30.04.2013)
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Journal Article
Conference Proceeding
Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in Interfacial Layer Formed by In Situ Desorption
Li, Chen-Chien, Chang-Liao, Kuei-Shu, Liu, Li-Jung, Lee, Tzu-Min, Fu, Chung-Hao, Chen, Ting-Ching, Cheng, Jen-Wei, Lu, Chun-Chang, Wang, Tien-Ko
Published in IEEE electron device letters (01.05.2014)
Published in IEEE electron device letters (01.05.2014)
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Journal Article
Enhanced operation and retention characteristics in charge-trapping flash memory device with a novel Si/Ge super-lattice channel
Liu, Li-Jung, Chang-Liao, Kuei-Shu, Jian, Yi-Chuen, Wang, Tien-Ko
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Journal Article
Conference Proceeding
Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation
Liu, Li-Jung, Chang-Liao, Kuei-Shu, Wu, Tai-Yu, Wang, Tien-Ko, Tsai, Wen-Fa, Ai, Chi-Fong
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Journal Article
Conference Proceeding
Ultralow EOT and high mobility Ge pMOSFETs with in-situ H2O plasma grown GeO2 and HfON gate dielectric
Li-Jung Liu, Kuei-Shu Chang-Liao, Chung-Hao Fu, Ting-Ching Chen, Jen-Wei Cheng, Chen-Chien Li, Chun-Chang Lu, Tien-Ko Wang
Published in 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2013)
Published in 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2013)
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Conference Proceeding
Very low EOT and high oxidation state interfacial layer in Ge MOS devices
Szu-Chun Yu, Kuei-Shu Chang-Liao, Mong-Chi Li, Wei-Fong Chi, Chen-Chien Li, Li-Jung Liu, Tzu-Min Lee, Yu-Wei Chang, Hsin-Kai Fang, Chung-Hao Fu, Chun-Chang Lu, Zong-Hao Ye, Tien-Ko Wang
Published in 2014 Silicon Nanoelectronics Workshop (SNW) (01.06.2014)
Published in 2014 Silicon Nanoelectronics Workshop (SNW) (01.06.2014)
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Conference Proceeding
Iron-implanted CuInSe 2 thin film – a diluted magnetic semiconductor
Lee, Chih-Hao, Liu, Li-Jung, Chen, Yu-Sheng
Published in Acta crystallographica. Section A, Foundations and advances (01.12.2017)
Published in Acta crystallographica. Section A, Foundations and advances (01.12.2017)
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Journal Article
Improved Electrical Characteristics of Ge pMOSFETs With ZrO sub(2)/HfO sub(2) Stack Gate Dielectric
Li, Chen-Chien, Chang-Liao, Kuei-Shu, Chi, Wei-Fong, Li, Mong-Chi, Chen, Ting-Chun, Su, Tzu-Hsiang, Chang, Yu-Wei, Tsai, Chia-Chi, Liu, Li-Jung, Fu, Chung-Hao, Lu, Chun-Chang
Published in IEEE electron device letters (01.01.2016)
Published in IEEE electron device letters (01.01.2016)
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Journal Article