A Comparative Study on Heavy-Ion Irradiation Impact on p-Channel and n-Channel Power UMOSFETs
Wang, Ying, Yu, Cheng-Hao, Li, Xing-Ji, Yang, Jian-Qun
Published in IEEE transactions on nuclear science (01.06.2022)
Published in IEEE transactions on nuclear science (01.06.2022)
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Journal Article
Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET
Yu, Cheng-Hao, Wang, Ying, Bao, Meng-Tian, Li, Xing-Ji, Yang, Jian-Qun, Cao, Fei
Published in IEEE transactions on electron devices (01.02.2022)
Published in IEEE transactions on electron devices (01.02.2022)
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Journal Article
Simulation Study of Single-Event Effects for the 4H-SiC VDMOSFET With Ultralow On-Resistance
Zhou, Jian-Cheng, Wang, Ying, Li, Xing-Ji, Yang, Jian-Qun, Bao, Meng-Tian, Cao, Fei
Published in IEEE transactions on electron devices (01.06.2022)
Published in IEEE transactions on electron devices (01.06.2022)
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Journal Article
Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices
Bi, Jian-Xiong, Wang, Ying, Wu, Xue, Li, Xing-ji, Yang, Jian-qun, Bao, Meng-Tian, Cao, Fei
Published in IEEE transactions on electron devices (01.10.2020)
Published in IEEE transactions on electron devices (01.10.2020)
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Journal Article
Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS
Yu, Cheng-Hao, Wang, Ying, Bao, Meng-Tian, Li, Xing-Ji, Yang, Jian-Qun, Tang, Zhao-Huan
Published in IEEE transactions on electron devices (01.10.2021)
Published in IEEE transactions on electron devices (01.10.2021)
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Journal Article
Research of Single-Event Burnout in 4H-SiC JBS Diode by Low Carrier Lifetime Control
Yu, Cheng-Hao, Wang, Ying, Li, Xing-Ji, Liu, Chao-Ming, Luo, Xin, Cao, Fei
Published in IEEE transactions on electron devices (01.12.2018)
Published in IEEE transactions on electron devices (01.12.2018)
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Journal Article
A Snapback Suppressed RC-IGBT With N-Si/n-Ge Heterojunction at Low Temperature
Zhang, Xiao-Dong, Wang, Ying, Bao, Meng-Tian, Li, Xing-Ji, Yang, Jian-Qun, Cao, Fei
Published in IEEE transactions on electron devices (01.10.2021)
Published in IEEE transactions on electron devices (01.10.2021)
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Journal Article
Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination
Yu, Cheng-Hao, Wang, Ying, Bao, Meng-Tian, Li, Xing-Ji, Yang, Jian-Qun, Tang, Zhao-Huan
Published in IEEE transactions on electron devices (01.07.2021)
Published in IEEE transactions on electron devices (01.07.2021)
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Journal Article
A compact circuit-level model for single-event burnout in SiC power MOSFET devices
Shen, Pei, Wang, Ying, Li, Xing-Ji, Yang, Jian-qun, Cao, Fei
Published in Japanese Journal of Applied Physics (01.12.2022)
Published in Japanese Journal of Applied Physics (01.12.2022)
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Journal Article
Research of Single-Event Burnout and Hardening of AlGaN/GaN-Based MISFET
Luo, Xin, Wang, Ying, Hao, Yue, Li, Xing-ji, Liu, Chao-Ming, Fei, Xin-Xing, Yu, Cheng-Hao, Cao, Fei
Published in IEEE transactions on electron devices (01.02.2019)
Published in IEEE transactions on electron devices (01.02.2019)
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Journal Article
Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar
Shen, Pei, Wang, Ying, Li, Xing-Ji, Yang, Jian-Qun, Cao, Fei
Published in Chinese physics B (01.05.2023)
Published in Chinese physics B (01.05.2023)
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Journal Article
Simulation of space heavy-ion induced primary knock-on atoms in bipolar devices
Zhang, Bin, Jiang, Hao, Xu, Xiao-Dong, Ying, Tao, Liu, Zhong-Li, Li, Wei-Qi, Yang, Jian-Qun, Li, Xing-Ji
Published in Chinese physics B (01.12.2023)
Published in Chinese physics B (01.12.2023)
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Journal Article
A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET
Wang, Ying, Zhou, Jian-cheng, Lin, Mao, Li, Xing-ji, Yang, Jian-Qun, Cao, Fei
Published in IEEE journal of the Electron Devices Society (2022)
Published in IEEE journal of the Electron Devices Society (2022)
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Journal Article
Improved 4H-SiC UMOSFET with super-junction shield region
Shen, Pei, Wang, Ying, Li, Xing-Ji, Yang, Jian-Qun, Yu, Cheng-Hao, Cao, Fei
Published in Chinese physics B (01.05.2021)
Published in Chinese physics B (01.05.2021)
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Journal Article
Radiation effects of 50-MeV protons on PNP bipolar junction transistors
Huang, Yuan-Ting, Cui, Xiu-Hai, Yang, Jian-Qun, Ying, Tao, Yu, Xue-Qiang, Dong, Lei, Li, Wei-Qi, Li, Xing-Ji
Published in Chinese physics B (01.01.2022)
Published in Chinese physics B (01.01.2022)
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Honokiol attenuate the arsenic trioxide‐induced cardiotoxicity by reducing the myocardial apoptosis
Huang, An‐Liang, Yang, Fan, Cheng, Ping, Liao, Dian‐ying, Zhou, Li, Ji, Xing‐Li, Peng, Dou‐Dou, Zhang, Li, Cheng, Ting‐Ting, Ma, Li, Xia, Xian‐Gen
Published in Pharmacology research & perspectives (01.04.2022)
Published in Pharmacology research & perspectives (01.04.2022)
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