Size Independent pH Sensitivity for Ion Sensitive FinFETs Down to 10 nm Width
Gupta, Mihir, Santermans, Sybren, Veloso, Anabela, Tao, Zheng, Li, Waikin, Hellings, Geert, Lagae, Liesbet, Van Roy, Willem, Martens, Koen
Published in IEEE sensors journal (15.08.2019)
Published in IEEE sensors journal (15.08.2019)
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(Invited) Challenges on Surface Conditioning in 3D Device Architectures: Triple-Gate FinFETs, Gate-All-Around Lateral and Vertical Nanowire FETs
Veloso, Anabela, Paraschiv, Vasile, Vecchio, Emma, Devriendt, Katia, Li, Waikin, Simoen, Eddy, Chan, B. T., Tao, Zheng, Rosseel, Erik, Loo, Roger, Milenin, Alexey P., Kunert, Bernardette, Teugels, Lieve, Sebaai, Farid, Lorant, Christophe, van Dorp, Dennis, Altamirano-Sánchez, Efraín, Brus, Stephan, Marien, Philippe, Fleischmann, Claudia, Melkonyan, Davit, Huynh-Bao, Trong, Eneman, Geert, Hellings, Geert, Sibaja-Hernandez, Arturo, Matagne, Philippe, Waldron, Niamh, Mocuta, Dan, Collaert, Nadine
Published in ECS transactions (15.08.2017)
Published in ECS transactions (15.08.2017)
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3D sequential CMOS top tier devices demonstration using a low temperature Smart Cut™ Si layer transfer
Vandoore, Anne, Wu, Zhicheng, Franco, Jacopo, Li, Waikin, Arimura, Hiroaki, Mannaert, Geert, Rosseel, Erik, Hikavyy, Andriy, Besnard, Guillaume, Radu, Ionut, Litta, Eugenio Dentoni, Horiguchi, Naoto
Published in 2021 Silicon Nanoelectronics Workshop (SNW) (13.06.2021)
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Published in 2021 Silicon Nanoelectronics Workshop (SNW) (13.06.2021)
Conference Proceeding
Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB
Smets, Quentin, Schram, Tom, Verreck, Devin, Cott, Daire, Groven, Benjamin, Ahmed, Zubair, Kaczer, Ben, Mitard, Jerome, Wu, Xiangyu, Kundu, Souvik, Mertens, Hans, Radisic, Dunja, Thiam, Arame, Li, Waikin, Dupuy, Emmanuel, Tao, Zheng, Vandersmissen, Kevin, Maurice, Thibaut, Lin, Dennis, Morin, Pierre, Asselberghs, Inge, Radu, Iuliana
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
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Conference Proceeding
(Invited) Challenges on Surface Conditioning in 3D Device Architectures: Triple-Gate FinFETs, Gate-All-Around Lateral and Vertical Nanowire FETs
Veloso, Anabela, Paraschiv, Vasile, Vecchio, Emma, Devriendt, Katia, Li, Waikin, Simoen, Eddy, Chan, B. T., Tao, Zheng, Rosseel, Erik, Loo, Roger, Milenin, Alexey P., Kunert, Bernardette, Teugels, Lieve, Sebaai, Farid, Lorant, Christophe, van Dorp, Dennis, Altamirano-Sánchez, Efraín, Brus, Stephan, Marien, Philippe, Fleischmann, Claudia, Melkonyan, Davit, Huynh-Bao, Trong, Eneman, Geert, Hellings, Geert, Sibaja-Hernandez, Arturo, Matagne, Philippe, Waldron, Niamh, Mocuta, Dan, Collaert, Nadine
Published in Meeting abstracts (Electrochemical Society) (01.09.2017)
Published in Meeting abstracts (Electrochemical Society) (01.09.2017)
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