Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance
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Published in Applied sciences (01.03.2024)
Published in Applied sciences (01.03.2024)
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Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics
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Published in Inorganics (01.02.2024)
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Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe[sub.2] Channel with Direct-Contact HfO[sub.2] Gate Dielectrics
Lu, Jie, Xiang, Zeyang, Wang, Kexiang, Shi, Mengrui, Wu, Liuxuan, Yan, Fuyu, Li, Ranping, Wang, Zixuan, Jin, Huilin, Jiang, Ran
Published in Inorganics (01.02.2024)
Published in Inorganics (01.02.2024)
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Investigation on Synaptic Adaptation and Fatigue in ZnO/HfZrO-Based Memristors under Continuous Electrical Pulse Stimulation
Xiang, Zeyang, Wang, Kexiang, Lu, Jie, Wang, Zixuan, Jin, Huilin, Li, Ranping, Shi, Mengrui, Wu, Liuxuan, Yan, Fuyu, Jiang, Ran
Published in Electronics (Basel) (01.03.2024)
Published in Electronics (Basel) (01.03.2024)
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