Teflon/SiO₂ Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process
Fan, Ching-Lin, Shang, Ming-Chi, Li, Bo-Jyun, Lin, Yu-Zuo, Wang, Shea-Jue, Lee, Win-Der, Hung, Bohr-Ran
Published in Materials (13.04.2015)
Published in Materials (13.04.2015)
Get full text
Journal Article
A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme
Fan, Ching-Lin, Shang, Ming-Chi, Li, Bo-Jyun, Lin, Yu-Zuo, Wang, Shea-Jue, Lee, Win-Der
Published in Materials (11.08.2014)
Published in Materials (11.08.2014)
Get full text
Journal Article
Improvement in reliability of amorphous indium-gallium-zinc oxide thin-film transistors with Teflon/SiO2 bilayer passivation under gate bias stress
Fan, Ching-Lin, Tseng, Fan-Ping, Li, Bo-Jyun, Lin, Yu-Zuo, Wang, Shea-Jue, Lee, Win-Der, Huang, Bohr-Ran
Published in Japanese Journal of Applied Physics (01.02.2016)
Published in Japanese Journal of Applied Physics (01.02.2016)
Get full text
Journal Article
Self-aligned amorphous indium-gallium-zinc-oxide thin-film transistor using a two-mask process without etching-stop layer
Ching-Lin Fan, Ming-Chi Shang, Bo-Jyun Li, Shea-Jue Wang, Win-Der Lee
Published in 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) (01.07.2014)
Published in 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) (01.07.2014)
Get full text
Conference Proceeding
Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO 2 bilayer passivation under gate bias stress
Fan, Ching-Lin, Tseng, Fan-Ping, Li, Bo-Jyun, Lin, Yu-Zuo, Wang, Shea-Jue, Lee, Win-Der, Huang, Bohr-Ran
Published in Japanese Journal of Applied Physics (01.02.2016)
Published in Japanese Journal of Applied Physics (01.02.2016)
Get full text
Journal Article