Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy
Zhao, Weisheng, Zhao, Xiaoxuan, Zhang, Boyu, Cao, Kaihua, Wang, Lezhi, Kang, Wang, Shi, Qian, Wang, Mengxing, Zhang, Yu, Wang, You, Peng, Shouzhong, Klein, Jacques-Olivier, de Barros Naviner, Lirida Alves, Ravelosona, Dafine
Published in Materials (12.01.2016)
Published in Materials (12.01.2016)
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A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric
Zhang, Jie, Li, Xiangdong, Ji, Jian, You, Shuzhen, Chen, Long, Wang, Lezhi, Li, Zilan, Hao, Yue, Zhang, Jincheng
Published in Micromachines (Basel) (02.08.2024)
Published in Micromachines (Basel) (02.08.2024)
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Study on the effect of the sanitary properties of microfiber synthetic leather base by using a filling agent
Qiang, Taotao, Wang, Yangyang, Wang, Lezhi, Zheng, Yonggui, Zhang, Fengjie, Zheng, Shujie
Published in Textile Research Journal (01.06.2018)
Published in Textile Research Journal (01.06.2018)
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Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect
Lang Zeng, Tianqi Gao, Deming Zhang, Shouzhong Peng, Lezhi Wang, Fanghui Gong, Xiaowan Qin, Mingzhi Long, Youguang Zhang, Wang, Kang L., Weisheng Zhao
Published in IEEE transactions on electron devices (01.12.2017)
Published in IEEE transactions on electron devices (01.12.2017)
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Interfacial Perpendicular Magnetic Anisotropy in Sub-20 nm Tunnel Junctions for Large-Capacity Spin-Transfer Torque Magnetic Random-Access Memory
Peng, Shouzhong, Kang, Wang, Wang, Mengxing, Cao, Kaihua, Zhao, Xiaoxuan, Wang, Lezhi, Zhang, Yue, Zhang, Youguang, Zhou, Yan, Wang, Kang L., Zhao, Weisheng
Published in IEEE magnetics letters (2017)
Published in IEEE magnetics letters (2017)
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Interface control of domain wall depinning field
Huang, Yangqi, Li, Xiang, Wang, Lezhi, Yu, Guoqiang, Wang, Kang L., Zhao, Weisheng
Published in AIP advances (01.05.2018)
Published in AIP advances (01.05.2018)
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A library of thermoresponsive diblock and statistical copolymers: Unravelling the effect of molar mass
Wang, Lezhi, Constantinou, Anna P., Li, Yuchen, Georgiou, Theoni K.
Published in European polymer journal (06.03.2024)
Published in European polymer journal (06.03.2024)
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Bi and oxygen defects improved visible light photocatalysis with BiOBr nanosheets
Ren, Xiaozhen, Zhang, Xunshuang, Guo, Ruichen, Zhang, Shulan, Wang, Lezhi, Pu, Xipeng
Published in Nanotechnology (04.12.2020)
Published in Nanotechnology (04.12.2020)
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Nickel metaphosphate supported ruthenium for all pH hydrogen evolution: From single atom, cluster to nanoparticle
Wang, Dewen, Jiao, Dongxu, Gong, Ming, Fan, Huafeng, Chen, Yuting, Wang, Lezhi, Fan, Jinchang, Wu, Jiandong, Singh, David J., Zhao, Jingxiang, Zheng, Weitao, Cui, Xiaoqiang
Published in Applied catalysis. B, Environmental (15.05.2023)
Published in Applied catalysis. B, Environmental (15.05.2023)
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1700 V High-performance GaN HEMTs on 6-inch Sapphire with 1.5 μm Thin Buffer
Li, Xiangdong, Wang, Junbo, Zhang, Jincheng, Han, Zhanfei, You, Shuzhen, Chen, Long, Wang, Lezhi, Li, Zilan, Yang, Weitao, Chang, Jingjing, Liu, Zhihong, Hao, Yue
Published in IEEE electron device letters (01.01.2024)
Published in IEEE electron device letters (01.01.2024)
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Journal Article
Achieving \ge 1200-V High-Performance GaN HEMTs on Sapphire With Carbon-Doped Buffer
Cheng, Zhibo, Li, Xiangdong, Chen, Long, Wang, Lezhi, Li, Zilan, Tang, Xi, Liu, Xiaoyu, Zhang, Tao, Jiang, Xi, Yuan, Song, You, Shuzhen, Hao, Yue, Zhang, Jincheng
Published in IEEE transactions on electron devices (28.10.2024)
Published in IEEE transactions on electron devices (28.10.2024)
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Journal Article
Report of GaN HEMTs on 8-in Sapphire
Wang, Junbo, Li, Xiangdong, Chen, Long, Liu, Tong, Han, Zhanfei, You, Shuzhen, Wang, Lezhi, Li, Zilan, Hao, Yue, Zhang, Jincheng
Published in IEEE transactions on electron devices (01.07.2024)
Published in IEEE transactions on electron devices (01.07.2024)
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p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics
Han, Zhanfei, Li, Xiangdong, Ji, Jian, Chen, Long, Wang, Lezhi, Cheng, Zhibo, Yang, Weitao, You, Shuzhen, Li, Zilan, Hao, Yue, Zhang, Jincheng
Published in IEEE electron device letters (01.07.2024)
Published in IEEE electron device letters (01.07.2024)
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Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications
Li, Xiangdong, Zhang, Jie, Ji, Jian, Cheng, Zhibo, Wang, Junbo, Chen, Long, Wang, Lezhi, You, Shuzhen, Zhai, Lili, Li, Qiushuang, Zhang, Yuanhang, Liu, Tong, Li, Zilan, Hao, Yue, Zhang, Jincheng
Published in IEEE transactions on electron devices (01.06.2024)
Published in IEEE transactions on electron devices (01.06.2024)
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Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization
Wang, Junbo, Li, Xiangdong, Cheng, Zhibo, Zhang, Tao, Zhou, Wenyong, Chen, Long, Yuan, Ye, Lu, Tongxin, Wang, Lezhi, Li, Zilan, You, Shuzhen, Wang, Xinqiang, Hao, Yue, Zhang, Jincheng
Published in IEEE transactions on electron devices (01.11.2024)
Published in IEEE transactions on electron devices (01.11.2024)
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Journal Article
Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation
Wang, Lezhi, Kang, Wang, Ebrahimi, Farbod, Li, Xiang, Huang, Yangqi, Zhao, Chao, Wang, Kang L., Zhao, Weisheng
Published in IEEE electron device letters (01.03.2018)
Published in IEEE electron device letters (01.03.2018)
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