Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer
Derluyn, J., Boeykens, S., Cheng, K., Vandersmissen, R., Das, J., Ruythooren, W., Degroote, S., Leys, M. R., Germain, M., Borghs, G.
Published in Journal of applied physics (01.09.2005)
Published in Journal of applied physics (01.09.2005)
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Growth of high quality InP layers in STI trenches on miscut Si (0 0 1) substrates
Wang, G., Leys, M.R., Nguyen, N.D., Loo, R., Brammertz, G., Richard, O., Bender, H., Dekoster, J., Meuris, M., Heyns, M.M., Caymax, M.
Published in Journal of crystal growth (2011)
Published in Journal of crystal growth (2011)
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Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells
Mols, Y., Leys, M.R., Simons, E., Poortmans, J., Borghs, G.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC
Boeykens, S., Leys, M.R., Germain, M., Belmans, R., Borghs, G.
Published in Journal of crystal growth (10.12.2004)
Published in Journal of crystal growth (10.12.2004)
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Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
Jacobs, K., Daele, B.Van, Leys, M.R., Moerman, I., Tendeloo, G.Van
Published in Journal of crystal growth (01.02.2003)
Published in Journal of crystal growth (01.02.2003)
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Low-loss, compact, and polarization independent PHASAR demultiplexer fabricated by using a double-etch process
den Besten, J.H., Dessens, M.P., Herben, C.G.P., Leijtens, X.J.M., Groen, F.H., Leys, M.R., Smit, M.K.
Published in IEEE photonics technology letters (01.01.2002)
Published in IEEE photonics technology letters (01.01.2002)
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Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy
Derluyn, J., Moerman, I., Leys, M. R., Patriarche, G., Sęk, G., Kudrawiec, R., Rudno-Rudziński, W., Ryczko, K., Misiewicz, J.
Published in Journal of applied physics (15.08.2003)
Published in Journal of applied physics (15.08.2003)
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Deep defects in GaN/AlGaN/SiC heterostructures
Kindl, D., Hubík, P., Krištofik, J., Mareš, J. J., Výborný, Z., Leys, M. R., Boeykens, S.
Published in Journal of applied physics (01.05.2009)
Published in Journal of applied physics (01.05.2009)
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Fundamental growth kinetics in MOMBE/CBE, MBE and MOVPE
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Polarization independent dilated WDM cross-connect on InP
Herben, C.G.P., Maat, D.H.P., Leijtens, X.J.M., Leys, M.R., Oei, Y.S., Smit, M.K.
Published in IEEE photonics technology letters (01.12.1999)
Published in IEEE photonics technology letters (01.12.1999)
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Morphology of homo-epitaxial vicinal (1 0 0) III–V surfaces
Verschuren, C.A., Leys, M.R., Rongen, R.T.H., Vonk, H., Wolter, J.H.
Published in Journal of crystal growth (01.04.1999)
Published in Journal of crystal growth (01.04.1999)
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Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C
Koenraad, P M, Blom, F A P, Langerak, C J G M, Leys, M R, Perenboom, J A A J, Singleton, J, Spermon, S J R M, Vleuten, W C van der, Voncken, A P J, Wolter, J H
Published in Semiconductor science and technology (01.08.1990)
Published in Semiconductor science and technology (01.08.1990)
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A modified BCF model to quantitatively describe the (1 0 0)InP growth rate in chemical beam epitaxy
Verschuren, C.A, Leys, M.R, Marschner, T, Vonk, H, Wolter, J.H
Published in Journal of crystal growth (01.06.1998)
Published in Journal of crystal growth (01.06.1998)
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Butt-coupling loss of 0.1 dB/interface in InP/InGaAs multiple-quantum-well waveguide-waveguide structures grown by selective area chemical beam epitaxy
Verschuren, C A, Harmsma, P J, Oei, Y S, Leys, M R, Vonk, H, Wolter, J H
Published in Semiconductor science and technology (01.08.1998)
Published in Semiconductor science and technology (01.08.1998)
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Butt-coupling loss of 0.1 dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy
Verschuren, C.A, Harmsma, P.J, Oei, Y.S, Leys, M.R, Vonk, H, Wolter, J.H
Published in Journal of crystal growth (01.06.1998)
Published in Journal of crystal growth (01.06.1998)
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Surface morphology of InP/InGaAs in selective area growth by chemical beam epitaxy
VERSCHUREN, C. A, LEYS, M. R, OEI, Y. S, VREEBURG, C. G. M, VONK, H, RONGEN, R. T. H, WOLTER, J. H
Published in Journal of crystal growth (1997)
Published in Journal of crystal growth (1997)
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A MBE-grown high-efficiency GaAs solar cell with a directly deposited aluminum front contact
Ragay, F.W., Leys, M.R., Nouwens, P.A.M., van der Vleuten, W.C., Wolter, J.H.
Published in IEEE electron device letters (01.12.1992)
Published in IEEE electron device letters (01.12.1992)
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