1/f noise in forward biased high voltage 4H-SiC Schottky diodes
Shabunina, Eugenia I., Levinshtein, Michael E., Shmidt, Natalia M., Ivanov, Pavel A., Palmour, John W.
Published in Solid-state electronics (01.06.2014)
Published in Solid-state electronics (01.06.2014)
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Journal Article
Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs
Ivanov, Pavel A, Levinshtein, Michael E, Rumyantsev, Sergey L, Ryu, Sei-Hyung, Agarwal, Anant K, Palmour, John W
Published in Solid-state electronics (01.04.2002)
Published in Solid-state electronics (01.04.2002)
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Journal Article
Carrier mobility model for GaN
Mnatsakanov, Tigran T, Levinshtein, Michael E, Pomortseva, Lubov I, Yurkov, Sergey N, Simin, Grigory S, Asif Khan, M
Published in Solid-state electronics (2003)
Published in Solid-state electronics (2003)
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Journal Article
Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias
Cheng, Lin, Ivanov, Pavel A., Shmidt, Natalia M., Levinshtein, Michael E., Shabunina, Eugenia I., Palmour, John W.
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Physical limitations of the diffusive approximation in semiconductor device modeling
Mnatsakanov, Tigran T., Tandoev, Alexey G., Levinshtein, Michael E., Yurkov, Sergey N.
Published in Solid-state electronics (01.02.2011)
Published in Solid-state electronics (01.02.2011)
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Journal Article
High power 4H–SiC pin diodes (10kV class) with record high carrier lifetime
Ivanov, Pavel A., Levinshtein, Michael E., Palmour, John W., Das, Mrinal K., Hull, Brett A.
Published in Solid-state electronics (01.07.2006)
Published in Solid-state electronics (01.07.2006)
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Journal Article
The impact of parasitic inductance on the dV/dt ruggedness of 4H-SiC Schottky diodes
Ivanov, Pavel A., Levinshtein, Michael E.
Published in Microelectronics and reliability (01.07.2021)
Published in Microelectronics and reliability (01.07.2021)
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Journal Article
Steady-state and transient characteristics of 10 kV 4H-SiC diodes
Levinshtein, Michael E., Mnatsakanov, Tigran T., Ivanov, Pavel A., Singh, Ranbir, Palmour, John W., Yurkov, Sergey N.
Published in Solid-state electronics (01.05.2004)
Published in Solid-state electronics (01.05.2004)
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Journal Article
Current-voltage characteristics and DLTS spectra of high voltage SiC Schottky diodes irradiated with electrons at high temperatures
Levinshtein, Michael E., Lebedev, Alexander A., Kozlovski, Vitali V., Malevsky, Dmitriy A., Kuzmin, Roman A., Oganesyan, Gagik A.
Published in Solid-state electronics (01.10.2022)
Published in Solid-state electronics (01.10.2022)
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Journal Article
Temperature dependence of turn-on processes in 4H–SiC thyristors
Levinshtein, Michael E, Mnatsakanov, Tigran T, Ivanov, Pavel A, Agarwal, Anant K, Palmour, John W, Rumyantsev, Sergey L, Tandoev, Aleksey G, Yurkov, Sergey N
Published in Solid-state electronics (01.03.2001)
Published in Solid-state electronics (01.03.2001)
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Journal Article
The critical charge density of 4H-SiC thyristors
Levinshtein, M.E., Palmour, J.W., Rumyanetsev, S.L., Singh, R.
Published in IEEE transactions on electron devices (01.01.1998)
Published in IEEE transactions on electron devices (01.01.1998)
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Journal Article
Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor
Ivanov, Pavel A, Levinshtein, Michael E, Rumyantsev, Sergey L, Agarwal, Anant K, Palmour, John W
Published in Solid-state electronics (01.12.2000)
Published in Solid-state electronics (01.12.2000)
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Journal Article