Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture
Leurquin, C., Vandendaele, W., Jaud, M.-A., Lavieville, R., Mohamad, B., Masante, C., Despesse, G., Nowak, E.
Published in IEEE transactions on electron devices (01.05.2024)
Published in IEEE transactions on electron devices (01.05.2024)
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Journal Article
Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs
Leurquin, C., Vandendaele, W., Gwoziecki, R., Mohamad, B., Despesse, G., Iucolano, F., Modica, R., Constant, A.
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications
Mohamad, B., Royer, C. Le, Rigaud-Minet, F., Piotrowicz, C., Paes Pinto Rocha, P. Fernandes, Leurquin, C., Vandendaele, W., Escoffier, R., Buckley, J., Becu, S., Biscarrat, J., Gwoziecki, R.
Published in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (07.03.2023)
Published in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (07.03.2023)
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Conference Proceeding
Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage
Leurquin, C., Vandendaele, W., Viey, A.G, Gwoziecki, R., Escoffier, R., Salot, R., Despesse, G., Iucolano, F., Modica, R., Constant, A.
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding