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Year of Publication 13.10.2022
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CONTACTS FOR HIGHLY SCALED TRANSISTORS
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Year of Publication 22.09.2022
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Multi-gate device
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Year of Publication 12.10.2021
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MULTI-GATE DEVICE AND METHOD OF FABRICATION THEREOF
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Year of Publication 02.09.2021
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Year of Publication 02.09.2021
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CONTACTS FOR HIGHLY SCALED TRANSISTORS
Diaz, Carlos H, Lien, Wai-Yi, Leung, Ying-Keung, Lin, Chun-Hsiung, Wu, Chung-Wei, Wang, Chih-Hao, Colinge, Jean-Pierre, Chang, Chia-Hao
Year of Publication 30.06.2022
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Year of Publication 30.06.2022
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Contacts for highly scaled transistors
Diaz, Carlos H, Wu, Chung-Cheng, Lien, Wai-Yi, Leung, Ying-Keung, Lin, Chun-Hsiung, Wang, Chih-Hao, Colinge, Jean-Pierre, Chang, Chia-Hao
Year of Publication 15.03.2022
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Year of Publication 15.03.2022
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On the SiO(2)-based gate-dielectric scaling limit forlow-standby power applications in the context of a 0.13 mu m CMOS logictechnology
Lin, Yo-Sheng, Huang, Huan-Tsung, Wu, Chung-Cheng, Leung, Ying-Keung, Pan, Hsu-Yang, Chang, Tse-En, Chen, Wei-Ming, Liaw, Jung-Jih, Diaz, C H
Published in IEEE transactions on electron devices (01.03.2002)
Published in IEEE transactions on electron devices (01.03.2002)
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Journal Article
On the SiO/sub 2/-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 μm CMOS logic technology
Yo-Sheng Lin, Huan-Tsung Huang, Chung-Cheng Wu, Ying-Keung Leung, Hsu-Yang Pan, Tse-En Chang, Wei-Ming Chen, Jung-Jih Liaw, Diaz, C.H.
Published in IEEE transactions on electron devices (01.03.2002)
Published in IEEE transactions on electron devices (01.03.2002)
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Journal Article
On the SiO2-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 [mu]m CMOS logic technology
Lin, Yo-Sheng, Huang, Huan-Tsung, Wu, Chung-Cheng, Leung, Ying-Keung, Pan, Hsu-Yang, Chang, Tse-En, Chen, Wei-Ming, Liaw, Jung-Jih, Diaz, C.H
Published in IEEE transactions on electron devices (01.03.2002)
Published in IEEE transactions on electron devices (01.03.2002)
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Journal Article