A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling
Moens, P., Franchi, J., Lettens, J., Schepper, L. De, Domeij, M., Allerstam, F.
Published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.09.2020)
Published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.09.2020)
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Conference Proceeding
Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling
Masin, F., De Santi, C., Lettens, J., Franchi, J., Domeij, M., Moens, P., Meneghini, M., Meneghesso, G., Zanoni, E.
Published in Journal of applied physics (14.10.2021)
Published in Journal of applied physics (14.10.2021)
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Journal Article
Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs
Masin, F., De Santi, C., Lettens, J., Geenen, F., Meneghesso, G., Zanoni, E., Moens, P., Meneghini, M.
Published in Microelectronics and reliability (01.11.2022)
Published in Microelectronics and reliability (01.11.2022)
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Journal Article
The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study
Moens, P., Geenen, F., De Schepper, L., Cano, JF, Lettens, J., Maslougkas, S., Franchi, J., Domeij, M.
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature
Masin, F., De Santi, C., Stockman, A., Lettens, J., Geenen, F., Meneghesso, G., Zanoni, E., Moens, P., Meneghini, M.
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding