Drain voltage dependent analytical model of tunnel field-effect transistors
Verhulst, Anne S., Leonelli, Daniele, Rooyackers, Rita, Groeseneken, Guido
Published in Journal of applied physics (15.07.2011)
Published in Journal of applied physics (15.07.2011)
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Journal Article
Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width
Leonelli, Daniele, Vandooren, Anne, Rooyackers, Rita, Verhulst, Anne S, Gendt, Stefan De, Heyns, Marc M, Groeseneken, Guido
Published in Japanese Journal of Applied Physics (01.04.2010)
Published in Japanese Journal of Applied Physics (01.04.2010)
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Journal Article
Silicide Engineering to Boost Si Tunnel Transistor Drive Current
Leonelli, Daniele, Vandooren, Anne, Rooyackers, Rita, Verhulst, Anne S, Gendt, Stefan De, Heyns, Marc M, Groeseneken, Guido
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Fabrication and Analysis of a / Heterojunction Line Tunnel FET
Walke, Amey M., Vandooren, Anne, Rooyackers, Rita, Leonelli, Daniele, Hikavyy, Andriy, Loo, Roger, Verhulst, Anne S., Kuo-Hsing Kao, Huyghebaert, Cedric, Groeseneken, Guido, Rao, Valipe Ramgopal, Bhuwalka, Krishna K., Heyns, Marc M., Collaert, Nadine, Thean, Aaron Voon-Yew
Published in IEEE transactions on electron devices (01.03.2014)
Published in IEEE transactions on electron devices (01.03.2014)
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Journal Article
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking
Duan, Xinlv, Huang, Kailiang, Feng, Junxiao, Niu, Jiebin, Qin, Haibo, Yin, Shihui, Jiao, Guangfan, Leonelli, Daniele, Zhao, Xiaoxuan, Wang, Zhaogui, Jing, Weiliang, Wang, Zhengbo, Wu, Ying, Xu, Jeffrey, Chen, Qian, Chuai, Xichen, Lu, Congyan, Wang, Wenwu, Yang, Guanhua, Geng, Di, Li, Ling, Liu, Ming
Published in IEEE transactions on electron devices (01.04.2022)
Published in IEEE transactions on electron devices (01.04.2022)
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Journal Article
Exploration of Scandium Doping in SbTe for Phase Change Memory Application
Barci, Marinela, Leonelli, Daniele, Zhou, Xue, Wang, Xiaojie, Garbin, Daniele, Jayakumar, Ganesh, Witters, Thomas, Vergel, Nathali Franchina, Kundu, Shreya, Palayam, Senthil Vadakupudhu, Jiao, Huifang, Wu, Hao, Kar, Gouri Sankar
Published in IEEE transactions on electron devices (01.11.2022)
Published in IEEE transactions on electron devices (01.11.2022)
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Journal Article
Exploration of Scandium Doping in Sb } Te } for Phase Change Memory Application
Barci, Marinela, Leonelli, Daniele, Zhou, Xue, Wang, Xiaojie, Garbin, Daniele, Jayakumar, Ganesh, Witters, Thomas, Vergel, Nathali Franchina, Kundu, Shreya, Palayam, Senthil Vadakupudhu, Jiao, Huifang, Wu, Hao, Kar, Gouri Sankar
Published in IEEE transactions on electron devices (2022)
Published in IEEE transactions on electron devices (2022)
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Journal Article
Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets
Kuo-Hsing Kao, Verhulst, A. S., Vandenberghe, W. G., Soree, B., Magnus, W., Leonelli, D., Groeseneken, G., De Meyer, K.
Published in IEEE transactions on electron devices (01.08.2012)
Published in IEEE transactions on electron devices (01.08.2012)
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Journal Article
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F 2 by Monolithic Stacking
Duan, Xinlv, Huang, Kailiang, Feng, Junxiao, Niu, Jiebin, Qin, Haibo, Yin, Shihui, Jiao, Guangfan, Leonelli, Daniele, Zhao, Xiaoxuan, Wang, Zhaogui, Jing, Weiliang, Wang, Zhengbo, Wu, Ying, Xu, Jeffrey, Chen, Qian, Chuai, Xichen, Lu, Congyan, Wang, Wenwu, Yang, Guanhua, Geng, Di, Li, Ling, Liu, Ming
Published in IEEE transactions on electron devices (01.04.2022)
Published in IEEE transactions on electron devices (01.04.2022)
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Journal Article
Fabrication and Analysis of a rm Si / rm Si 0.55 rm Ge 0.45 Heterojunction Line Tunnel FET
Walke, Amey M, Vandooren, Anne, Rooyackers, Rita, Leonelli, Daniele, Hikavyy, Andriy, Loo, Roger, Verhulst, Anne S, Kao, Kuo-Hsing, Huyghebaert, Cedric, Groeseneken, Guido, Rao, Valipe Ramgopal, Bhuwalka, Krishna K, Heyns, Marc M, Collaert, Nadine, Thean, Aaron Voon-Yew
Published in IEEE transactions on electron devices (01.03.2014)
Published in IEEE transactions on electron devices (01.03.2014)
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Journal Article
Trends and Challenges in Si and Hetero-Junction Tunnel Field Effect Transistors
Claeys, Cor, Leonelli, Daniele, Rooyackers, Rita, Vandooren, Anne, Verhulst, Anne, Heyns, Marc, Groeseneken, Guido, De Gendt, Stefan
Published in ECS transactions (01.01.2011)
Published in ECS transactions (01.01.2011)
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Journal Article
Impact of external magnetic fields on STT-MRAM
Dieny, Bernard, Aggarwal, Sanjeev, Naik, Vinayak Bharat, Couet, Sebastien, Coughlin, Thomas, Fukami, Shunsuke, Garello, Kevin, Guedj, Jack, Incorvia, Jean Anne C, Lebrun, Laurent, Lee, Kyung-Jin, Leonelli, Daniele, Noh, Yonghwan, Salimy, Siamak, Soss, Steven, Thomas, Luc, Wang, Weigang, Worledge, Daniel
Year of Publication 09.09.2024
Year of Publication 09.09.2024
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Journal Article
(Invited) Boosting the On-Current of Si-Based Tunnel Field-Effect Transistors
Verhulst, Anne S., Vandenberghe, William G., Leonelli, Daniele, Rooyackers, Rita, Vandooren, Anne, Pourtois, Geoffrey, De Gendt, S., Heyns, Marc M., Groeseneken, Guido
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
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Journal Article
Performance and Variability-Aware SRAM Design for Gate-All-Around Nanosheets and Benchmark with FinFETs at 3nm Technology Node
Rzepa, Gerhard, Bhuwalka, Krishna K., Baumgartner, Oskar, Leonelli, Daniele, Karner, Hui-Wen, Schanovsky, Franz, Kernstock, Christian, Stanojevic, Zlatan, Wu, Hao, Benistant, Francis, Liu, Changze, Karner, Markus
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
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Conference Proceeding
Tunnel Field-Effect Transistors for Future Low-Power Nano-Electronics
Verhulst, Anne S., Vandenberghe, William G., Leonelli, Daniele, Rooyackers, Rita, Vandooren, Anne, De Gendt, Stefan, Heyns, Marc M., Groeseneken, Guido
Published in ECS transactions (01.01.2009)
Published in ECS transactions (01.01.2009)
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Journal Article
Novel Vertical Channel-All-Around(CAA) IGZO FETs for 2\mathrm0\mathrm DRAM with High Density beyond 4F2 by Monolithic Stacking
Duan, Xinlv, Huang, Kailiang, Feng, Junxiao, Niu, Jiebin, Qin, Haibo, Yin, Shihui, Jiao, Guangfan, Leonelli, Daniele, Zhao, Xiaoxuan, Jing, Weiliang, Wang, Zhengbo, Chen, Qian, Chuai, Xichen, Lu, Congyan, Wang, Wenwu, Yang, Guanhua, Geng, Di, Li, Ling, Liu, Ming
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
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Conference Proceeding