AC-Stress Degradation and Its Anneal in SiC MOSFETs
Habersat, Daniel B., Lelis, Aivars J.
Published in IEEE transactions on electron devices (01.09.2022)
Published in IEEE transactions on electron devices (01.09.2022)
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Journal Article
Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs
Green, Ron, Lelis, Aivars, Habersat, Daniel
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
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Journal Article
Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors
Klingshirn, Christopher J., Jayawardena, Asanka, Dhar, Sarit, Ramamurthy, Rahul P., Morisette, Dallas, Zheleva, Tsvetanka, Lelis, Aivars, Salamanca-Riba, Lourdes G.
Published in Journal of applied physics (21.05.2021)
Published in Journal of applied physics (21.05.2021)
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Journal Article
Comparison of SiC MOSFET Characteristics Following Body-Diode Forward-Current Stress
Green, Ronald, Nouketcha, Franklin L., Lelis, Aivars J.
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs
Green, Ronald, Habersat, Daniel B., Lelis, Aivars J.
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs
Green, Ronald, Lelis, Aivars J., Habersat, Daniel B.
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Feasibility of SiC threshold voltage drift characterization for reliability assessment in production environments
Habersat, Daniel B., Green, Ron, Lelis, Aivars J.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Short-circuit robustness testing of SiC MOSFETs
Green, Ronald, Urciuoli, Damian P., Lelis, Aivars J.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
A Physical Model of High Temperature 4H-SiC MOSFETs
Potbhare, Siddharth, Goldsman, Neil, Lelis, Aivars, McGarrity, James M., McLean, F. Barry, Habersat, Daniel
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
Comparison of Test Methods for Proper Characterization of VT in SiC MOSFETs
Green, Ronald, Habersat, Daniel B., El, Mooro, Lelis, Aivars J.
Published in Materials science forum (24.05.2016)
Published in Materials science forum (24.05.2016)
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Journal Article
Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs
Ogunniyi, Aderinto, Schrock, James, Hinojosa, Miguel, O'Brien, Heather, Lelis, Aivars, Bayne, Stephen, Sei-Hyung Ryu
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article