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Published in Physica status solidi. C (01.03.2013)
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Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer
Voronenkov, V V, Leonidov, A A, Bochkareva, N I, Gorbunov, R I, Latyshev, P E, Lelikov, Y S, Kogotkov, V S, Zubrilov, A S, Shreter, Y G
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Published in Journal of physics. Conference series (01.03.2019)
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On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire
Voronenkov, V. V., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Pinchuk, A. V., Zubrilov, A. S., Gorbunov, R. I., Latishev, F. E., Bochkareva, N. I., Lelikov, Y. S., Tarkhin, D. V., Smirnov, A. N., Davydov, V. Y., Sheremet, I. A., Shreter, Y. G.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
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Journal Article
Two modes of HVPE growth of GaN and related macrodefects
Voronenkov, V V, Bochkareva, N I, Gorbunov, R I, Latyshev, P E, Lelikov, Y S, Rebane, Y T, Tsyuk, A I, Zubrilov, A S, Popp, U W, Strafela, M, Strunk, H P, Shreter, Y G
Published in arXiv.org (20.02.2019)
Published in arXiv.org (20.02.2019)
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Mechanism of the GaN LED efficiency falloff with increasing current
Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, F. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
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Effect of the electric field on the intensity and spectrum of emission from InGaN/GaN quantum wells
Bochkareva, N. I., Bogatov, A. L., Gorbunov, R. I., Latyshev, F. E., Zubrilov, A. S., Tsyuk, A. I., Klochkov, A. V., Lelikov, Y. S., Rebane, Y. T., Shreter, Y. G.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2009)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2009)
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