High-density MIM capacitors with HfO2 dielectrics
Perng, Tsu-Hsiu, Chien, Chao-Hsin, Chen, Ching-Wei, Lehnen, Peer, Chang, Chun-Yen
Published in Thin solid films (22.12.2004)
Published in Thin solid films (22.12.2004)
Get full text
Journal Article
Growth of Dysprosium-, Scandium-, and Hafnium-based Third Generation High-κ Dielectrics by Atomic Vapor Deposition
Adelmann, C., Lehnen, P., Van Elshocht, S., Zhao, C., Brijs, B., Franquet, A., Conard, T., Roeckerath, M., Schubert, J., Boissière, O., Lohe, C., De Gendt, S.
Published in Chemical vapor deposition (01.10.2007)
Published in Chemical vapor deposition (01.10.2007)
Get full text
Journal Article
Improved reliability of HfO2/SiON gate stack by fluorine incorporation
LU, Wen-Tai, CHIEIN, Chao-Hsin, LAN, Wen-Ting, LEE, Tsung-Chieh, LEHNEN, Peer, HUANG, Tiao-Yuan
Published in IEEE electron device letters (01.04.2006)
Published in IEEE electron device letters (01.04.2006)
Get full text
Journal Article
(Invited) Innovative Deposition Technology for Advanced Materials
Baumann, Peter K., Heuken, Michael, Weber, Ulrich, Lehnen, Peer, Senzaki, Yoshi, Lindner, Johannes, Lu, Brian, Karim, Ziaul, Schineller, Bernd
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
Get full text
Journal Article
High-density MIM capacitors with HfO 2 dielectrics
Perng, Tsu-Hsiu, Chien, Chao-Hsin, Chen, Ching-Wei, Lehnen, Peer, Chang, Chun-Yen
Published in Thin solid films (2004)
Published in Thin solid films (2004)
Get full text
Journal Article
AVD and MOCVD TaCN-based Films for Gate Metal Applications on High k Gate Dielectrics
Karim, Zia, Barbar, Ghassan, Boissière, Olivier, Lehnen, Peer, Lohe, Christoph, Seidel, Tom, Adelmann, Christoph, Conard, Thierry, O'Sullivan, Barry, Ragnarsson, Lars-Aåke, Schram, Tom, Van Elshocht, Sven, De Gendt, Stefan
Published in ECS transactions (28.09.2007)
Published in ECS transactions (28.09.2007)
Get full text
Journal Article
Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-Based Gate Dielectrics
Karim, Zia, Biossiere, Olivier, Lohe, Christoph, Zhang, Zhihong, Park, Woong, Manke, Christian, Baumann, Peter K., Dalton, Jeremie, Ramanathan, Sasangan, Lindner, Johannes, Seidel, Tom, Lehnen, Peer
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
Get full text
Journal Article
DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties
Adelmann, Christoph, Van Elshocht, Sven, Lehnen, Peer, Conard, Thierry, Franquet, Alexis, Zhao, Chao, Ragnarsson, Lars-Ake, Chang, Vincent, Cho, Hag-Ju, Hong-Yu, Yu, De Gendt, Stefan
Published in ECS transactions (27.04.2007)
Published in ECS transactions (27.04.2007)
Get full text
Journal Article
HfO2 MIS capacitor with copper gate electrode
PERNG, Tsu-Hsiu, CHIEN, Chao-Hsin, CHEN, Ching-Wei, YANG, Ming-Jui, LEHNEN, Peer, CHANG, Chun-Yen, HUANG, Tiao-Yuan
Published in IEEE electron device letters (01.12.2004)
Published in IEEE electron device letters (01.12.2004)
Get full text
Journal Article
Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO 2 Gate Stacks by Post Deposition N 2 O Plasma Treatment
Lu, Wen-Tai, Chien, Chao-Hsin, Lan, Wen-Ting, Lee, Tsung-Chieh, Yang, Ming-Jui, Shen, Shih-Wen, Lehnen, Peer, Huang, Tiao-Yuan
Published in Japanese Journal of Applied Physics (01.11.2005)
Published in Japanese Journal of Applied Physics (01.11.2005)
Get full text
Journal Article
Electrical Characteristics of Thin HfO 2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
Chen, Ching-Wei, Chien, Chao-Hsin, Perng, Tsu-Hsiu, Yang, Ming-Jui, Liang, Jann-Shyang, Lehnen, Peer, Tsui, Bing-Yue, Chang, Chun-Yen
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
Get full text
Journal Article