Optical and electrical studies on the TS defect in 4H-SiC
Lehmeyer, Johannes A F, Fuchs, Alexander D, Li, Zhengming, Bornträger, Titus, Candolfi, Fabio, Schober, Maximilian, Fischer, Marcus, Hartmann, Martin, Neu, Elke, Bockstedte, Michel, Krieger, Michael, Weber, Heiko B
Published in Journal of physics. D, Applied physics (06.01.2025)
Published in Journal of physics. D, Applied physics (06.01.2025)
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Evaluation of 4H‐SiC MOSFET transfer characteristics using machine‐learning techniques
Lehmeyer, Johannes A. F., Citak, Timon, Weber, Heiko B., Krieger, Michael
Published in Electronics letters (01.03.2023)
Published in Electronics letters (01.03.2023)
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Corrigendum: Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain (2021 New J. Phys. 23 073002)
Candolfi, Fabio, Lehmeyer, Johannes A F, Rühl, Maximilian, Nagy, Roland, Weisser, Matthias, Bockstedte, Michel, Krieger, Michael, Weber, Heiko B
Published in New journal of physics (01.07.2024)
Published in New journal of physics (01.07.2024)
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NOMAD CAMELS: Configurable Application for Measurements, Experiments and Laboratory Systems
Fuchs, Alexander D, Lehmeyer, Johannes A F, Junkes, Heinz, Weber, Heiko B, Krieger, Michael
Published in arXiv.org (12.02.2024)
Published in arXiv.org (12.02.2024)
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On the experimental properties of the TS defect in 4H-SiC
Lehmeyer, Johannes A F, Fuchs, Alexander D, Li, Zhengming, Titus Bornträger, Candolfi, Fabio, Schober, Maximilian, Fischer, Marcus, Hartmann, Martin, Neu, Elke, Bockstedte, Michel, Krieger, Michael, Weber, Heiko B
Published in arXiv.org (15.04.2024)
Published in arXiv.org (15.04.2024)
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