Deteriorated Non-Linear Interference in 3D NAND Cell With Word-Line Pitch Scaling Due to the Incapability to Turn on Non-Gate-Controlled Region
Chang, Yao-Wen, Wu, Guan-Wei, Yang, I-Chen, Huang, Yu-Hung, Lee, Ya-Jui, Chen, Kuan-Fu, Chen, Yin-Jen, Lu, Tao-Cheng, Chen, Kuang-Chao, Lu, Chih-Yuan
Published in IEEE electron device letters (01.11.2023)
Published in IEEE electron device letters (01.11.2023)
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Journal Article
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film
Chang, Yao-Wen, Wu, Guan-Wei, Yang, I-Chen, Huang, Yu-Hung, Lee, Ya-Jui, Lee, Chih-Hsiung, Chen, Kuan-Fu, Lu, Tao-Cheng, Chen, Kuang-Chao, Lu, Chih-Yuan
Published in IEEE electron device letters (01.12.2022)
Published in IEEE electron device letters (01.12.2022)
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Journal Article
Impact of Moisture From Passivation on Endurance and Retention of NAND Flash Memory
Zih-Song Wang, Te-Yuan Yin, Tzung-Hua Ying, Ya-Jui Lee, Chieh-Yi Lu, Arakawa, H., Chrong Jung Lin
Published in IEEE transactions on electron devices (01.01.2013)
Published in IEEE transactions on electron devices (01.01.2013)
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Journal Article
Extraction and Analysis of Interface States in 50-nm nand Flash Devices
Chin-Rung Yan, Chen, J. F., Ya-Jui Lee, Yu-Jie Liao, Chung-Yi Lin, Chih-Yuan Chen, Yin-Chia Lin, Huei-Haurng Chen
Published in IEEE transactions on electron devices (01.03.2013)
Published in IEEE transactions on electron devices (01.03.2013)
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Journal Article
A New Recess Method for SA-STI nand Flash Memory
Zih-Song Wang, Ya-Jui Lee, Yang, Rex, Ying-Chia Li, Huei-Haurng Chen, Chrong Jung Lin
Published in IEEE electron device letters (01.06.2012)
Published in IEEE electron device letters (01.06.2012)
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Journal Article
Characteristics of Sub-50nm NAND Flash Devices with Various Self-Aligned Shallow Trench Isolation Depths
Yan, Chin-Rung, Chen, Jone F, Lee, Ya-Jui, Huang, Wei-Shiang, Huang, Meng-Ju, Chen, Chih-Yuan, Lin, Ying-Chia, Chang, Kuei-Fen, Chen, Huei-Haurng
Published in Japanese Journal of Applied Physics (01.11.2013)
Published in Japanese Journal of Applied Physics (01.11.2013)
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Journal Article
Characteristics of Sub-50 nm NAND Flash Devices with Various Self-Aligned Shallow Trench Isolation Depths
Yan, Chin-Rung, Chen, Jone F, Lee, Ya-Jui, Huang, Wei-Shiang, Huang, Meng-Ju, Chen, Chih-Yuan, Lin, Ying-Chia, Chang, Kuei-Fen, Chen, Huei-Haurng
Published in Japanese Journal of Applied Physics (01.11.2013)
Published in Japanese Journal of Applied Physics (01.11.2013)
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Journal Article