Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths
Lee, Yeonghun, Hu, Yaoqiao, Lang, Xiuyao, Kim, Dongwook, Li, Kejun, Ping, Yuan, Fu, Kai-Mei C, Cho, Kyeongjae
Published in Nature communications (06.12.2022)
Published in Nature communications (06.12.2022)
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Journal Article
A Study on the Channel Expansion VAE for Content-Based Image Retrieval
Lee, Kyounghak, Lee, Yeonghun, Ko, Hyung-Hwa, Kang, Minsoo
Published in Applied sciences (01.09.2022)
Published in Applied sciences (01.09.2022)
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Journal Article
Ambient effect on the Curie temperatures and magnetic domains in metallic two-dimensional magnets
Tu, Zhiyin, Xie, Ti, Lee, Yeonghun, Zhou, Jinling, Admasu, Alemayehu S., Gong, Yu, Valanoor, Nagarajan, Cumings, John, Cheong, Sang-Wook, Takeuchi, Ichiro, Cho, Kyeongjae, Gong, Cheng
Published in NPJ 2D materials and applications (28.06.2021)
Published in NPJ 2D materials and applications (28.06.2021)
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Journal Article
Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis
Lee, Yeonghun, Kakushima, Kuniyuki, Natori, Kenji, Iwai, Hiroshi
Published in Journal of applied physics (01.06.2011)
Published in Journal of applied physics (01.06.2011)
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Journal Article
Gate Capacitance Modeling and Diameter-Dependent Performance of Nanowire MOSFETs
Yeonghun Lee, Kakushima, K., Natori, K., Iwai, H.
Published in IEEE transactions on electron devices (01.04.2012)
Published in IEEE transactions on electron devices (01.04.2012)
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Journal Article
EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature
Kawanago, T., Yeonghun Lee, Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.
Published in IEEE transactions on electron devices (01.02.2012)
Published in IEEE transactions on electron devices (01.02.2012)
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Journal Article
Size-dependent properties of ballistic silicon nanowire field effect transistors
Lee, Yeonghun, Kakushima, Kuniyuki, Shiraishi, Kenji, Natori, Kenji, Iwai, Hiroshi
Published in Journal of applied physics (01.06.2010)
Published in Journal of applied physics (01.06.2010)
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Journal Article
Gate semi-around Si nanowire FET fabricated by conventional CMOS process with very high drivability
Sato, S, Yeonghun Lee, Kakushima, K, Ahmet, P, Ohmori, K, Natori, K, Yamada, K, Iwai, H
Published in 2010 Proceedings of the European Solid State Device Research Conference (01.09.2010)
Published in 2010 Proceedings of the European Solid State Device Research Conference (01.09.2010)
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Conference Proceeding
First-Principles Study on Electron-Induced Excitations of Atomic Layer Deposition Precursors: Inelastic Electron Wave Packet Scattering with Cobalt Tricarbonyl Nitrosyl Co(CO)3NO Using Time-Dependent Density Functional Theory
Yao, Xiaolong, Lee, Yeonghun, Ceresoli, Davide, Cho, Kyeongjae
Published in The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory (03.06.2021)
Published in The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory (03.06.2021)
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Journal Article
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition
Park, Yungyeong, Park, Yosep, Choi, Hyeonseok, Lim, Subeen, Kim, Dongwook, Lee, Yeonghun
Published in IEEE transactions on electron devices (01.09.2024)
Published in IEEE transactions on electron devices (01.09.2024)
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Journal Article
First-Principles Study on Electron-Induced Excitations of Atomic Layer Deposition Precursors: Inelastic Electron Wave Packet Scattering with Cobalt Tricarbonyl Nitrosyl Co(CO) 3 NO Using Time-Dependent Density Functional Theory
Yao, Xiaolong, Lee, Yeonghun, Ceresoli, Davide, Cho, Kyeongjae
Published in The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory (03.06.2021)
Published in The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory (03.06.2021)
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Journal Article
First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6
Hu, Yaoqiao, Hwang, Jeongwoon, Lee, Yeonghun, Conlin, Patrick, Schlom, Darrell G., Datta, Suman, Cho, Kyeongjae
Published in Journal of applied physics (14.11.2019)
Published in Journal of applied physics (14.11.2019)
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Journal Article
Surface Energy-Driven Preferential Grain Growth of Metal Halide Perovskites: Effects of Nanoimprint Lithography Beyond Direct Patterning
Moon, Jiyoung, Kwon, Sunah, Alahbakhshi, Masoud, Lee, Yeonghun, Cho, Kyeongjae, Zakhidov, Anvar, Kim, Moon J, Gu, Qing
Published in ACS applied materials & interfaces (03.02.2021)
Published in ACS applied materials & interfaces (03.02.2021)
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Journal Article