Sb-Se-based phase-change memory device with lower power and higher speed operations
Sung-Min Yoon, Nam-Yeal Lee, Sang-Ouk Ryu, Kyu-Jeong Choi, Park, Y.-S., Seung-Yun Lee, Byoung-Gon Yu, Myung-Jin Kang, Se-Young Choi, Wuttig, M.
Published in IEEE electron device letters (01.06.2006)
Published in IEEE electron device letters (01.06.2006)
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Journal Article
The effect of antimony-doping on Ge2Sb2Te5, a phase change material
CHOI, Kyu-Jeong, YOON, Sung-Min, LEE, Nam-Yeal, LEE, Seung-Yun, PARK, Young-Sam, YU, Byoung-Gon, RYU, Sang-Ouk
Published in Thin solid films (01.10.2008)
Published in Thin solid films (01.10.2008)
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Journal Article
Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films
YOON, Sung-Min, CHOI, Kyu-Jeong, LEE, Nam-Yeal, LEE, Seung-Yun, PARK, Young-Sam, YU, Byoung-Gon
Published in Applied surface science (31.10.2007)
Published in Applied surface science (31.10.2007)
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Conference Proceeding
Journal Article
The characteristics of Cu-drift induced dielectric breakdown under alternating polarity bias temperature stress
Sung-Yup Jung, Byoung-Joon Kim, Nam Yeal Lee, Baek-Mann Kim, Seung Jin Yeom, Noh Jung Kwak, Young-Chang Joo
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
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Conference Proceeding
Bias polarity and frequency effects of Cu-induced dielectric breakdown in damascene Cu interconnects
Jung, Sung-Yup, Kim, Byoung-Joon, Lee, Nam Yeal, Kim, Baek-Mann, Yeom, Seung Jin, Kwak, Noh Jung, Joo, Young-Chang
Published in Microelectronic engineering (2012)
Published in Microelectronic engineering (2012)
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Journal Article
Conference Proceeding
Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti–Si–N Heating Layers
Yoon, Sung-Min, Choi, Kyu-Jeong, Lee, Nam-Yeal, Jung, Soon-Won, Lee, Seung-Yun, Park, Young-Sam, Yu, Byoung-Gon, Lee, Su-Jin, Yoon, Soon-Gil
Published in Journal of the Electrochemical Society (2008)
Published in Journal of the Electrochemical Society (2008)
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Journal Article
MATERIAL DESIGN SCHEMES FOR SINGLE-TRANSISTOR-TYPE FERROELECTRIC MEMORY CELLS USING Pt/(Bi,La)4Ti3O12/ONO/Si STRUCTURES
N-Y, Lee, S-M, Yoon, I-K, You, S-O, Ryu, S-M, Cho, W-C, Shin, K-J, Choi
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 42, no. 11, pp. 6955-6959. 2003 (2003)
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 42, no. 11, pp. 6955-6959. 2003 (2003)
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Journal Article
Microstructure and Electrical Properties of BLT Films by Chemical Solution Deposition
Liu, Guoxia, Lee 1, Won-Jae, Lee 1, Geun-Hyoung, Kim 1, Il-Soo, Shin 1, Byoung-Chul, Lee 2, Nam-Yeal, Ryu 2, Sang-Ouk, Shin 2, Woong-Chul
Published in Integrated ferroelectrics (01.01.2005)
Published in Integrated ferroelectrics (01.01.2005)
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Journal Article
Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories
Lee, Seung-Yun, Yoon, Sung-Min, Choi, Kyu-Jeong, Lee, Nam-Yeal, Park, Young-Sam, Ryu, Sang-Ouk, Yu, Byoung-Gon, Kim, Sang-Hoon, Lee, Sang-Heung
Published in Applied surface science (31.10.2007)
Published in Applied surface science (31.10.2007)
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Journal Article
Conference Proceeding
Device characterization and Fabrication Issues for Ferroelectric Gate Field Effect Transistor Device
Yu, Byoung-Gon, You, In-Kyu, Lee, Won-Jae, Ryu, Sang-Ouk, Kim, Kwi-Dong, Yoon, Sung-Min, Cho, Seong-Mok, Lee, Nam-Yeal, Shin, Woong-Chul
Published in Journal of semiconductor technology and science (2002)
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Published in Journal of semiconductor technology and science (2002)
Journal Article
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME
HONG, SEUNG HEE, LEE, HYO SEOK, YEOM, SEUNG JIN, LIM, SUNG WON, LEE, NAM YEAL
Year of Publication 23.10.2014
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Year of Publication 23.10.2014
Patent
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME
HONG, SEUNG HEE, LEE, HYO SEOK, YEOM, SEUNG JIN, LIM, SUNG WON, LEE, NAM YEAL
Year of Publication 08.07.2014
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Year of Publication 08.07.2014
Patent