Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans‐Conductance Coefficient by Adopting Double‐Layered Al2O3/SiNx Gate Insulator
Kim, Yujin, Lee, Kwang‐Heum, Mun, Geumbi, Park, Kyeongwoo, Park, Sang‐Hee Ko
Published in Physica status solidi. A, Applications and materials science (01.12.2017)
Published in Physica status solidi. A, Applications and materials science (01.12.2017)
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Journal Article
Solution‐Processed, Photo‐Patternable Fluorinated Sol–Gel Hybrid Materials as a Bio‐Fluidic Barrier for Flexible Electronic Systems
Lee, Injun, Kim, Yong Ho, Jang, Jinhyeong, Lee, Kwang‐Heum, Jang, Junho, Lim, Young‐Woo, Park, Sang‐Hee Ko, Park, Chan Beum, Lee, Wonryung, Bae, Byeong‐Soo
Published in Advanced electronic materials (01.03.2020)
Published in Advanced electronic materials (01.03.2020)
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Journal Article
Suppressing channel-shortening effect of self-aligned coplanar Al-doped In-Sn-Zn-O TFTs using Mo-Al alloy source/drain electrode as Cu diffusion barrier
Jeong, Wooseok, Winkler, Jörg, Schmidt, Hennrik, Lee, Kwang-Heum, Park, Sang-Hee Ko
Published in Journal of alloys and compounds (05.04.2021)
Published in Journal of alloys and compounds (05.04.2021)
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Journal Article
Trench-Structured High-Current-Driving Aluminum-Doped Indium-Tin-Zinc Oxide Semiconductor Thin-Film Transistor
Kim, Do Hyung, Lee, Kwang-Heum, Lee, Seung Hee, Kim, Junsung, Yang, Junghoon, Kim, Jingyu, Cho, Seong-In, Ji, Kwang Hwan, Hwang, Chi-Sun, Ko Park, Sang-Hee
Published in IEEE electron device letters (01.10.2022)
Published in IEEE electron device letters (01.10.2022)
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Journal Article
Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors
Jeon, Sori, Lee, Kwang-Heum, Lee, Seung-Hee, Cho, Seong-In, Hwang, Chi-Sun, Ko, Jong Beom, Park, Sang-Hee Ko
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (26.10.2023)
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (26.10.2023)
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Journal Article
Contact Properties between Low-Resistive Al-Based Source/Drain and InOx in Top-Gate Bottom-Contact Oxide Thin-Film Transistor for Application to the Vertical-TFT
Jeon, Sori, Lee, Kwang-Heum, Lee, Seung-Hee, Hwang, Chi-Sun, Park, Sang-Hee Ko
Published in Proceedings of the International Display Workshops (28.11.2019)
Published in Proceedings of the International Display Workshops (28.11.2019)
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