Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
Dharmarasu, Nethaji, Radhakrishnan, K, Agrawal, Manvi, Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth. E, Ing, Ng Geok
Published in Applied physics express (01.09.2012)
Published in Applied physics express (01.09.2012)
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Journal Article
Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process
Lee, Kwang Hong, Tan, Chuan Seng, Wang, Yue, Wang, Bing, Zhang, Li, Sasangka, Wardhana Aji, Goh, Shuh Chin, Bao, Shuyu, Lee, Kenneth E., Fitzgerald, Eugene A.
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding
Zhang, Li, Lee, Kwang Hong, Kadir, Abdul, Wang, Yue, Lee, Kenneth E., Tan, Chuan Seng, Chua, Soo Jin, Fitzgerald, Eugene A.
Published in Japanese Journal of Applied Physics (01.05.2018)
Published in Japanese Journal of Applied Physics (01.05.2018)
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Journal Article
MOCVD growth of GaN on SEMI-spec 200 mm Si
Zhang, Li, Hong Lee, Kwang, Riko, I Made, Huang, Chieh-Chih, Kadir, Abdul, Lee, Kenneth E, Jin Chua, Soo, Fitzgerald, Eugene A
Published in Semiconductor science and technology (25.04.2017)
Published in Semiconductor science and technology (25.04.2017)
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Journal Article
(Invited) Monolithic Integration of Si-CMOS and III-V-on-Si through Direct Wafer Bonding Process
Lee, Kwang Hong, Zhang, Li, Wang, Bing, Wang, Yue, Sasangka, Wardhana, Lee, Kenneth E., Fitzgerald, Eugene A.
Published in ECS transactions (01.01.2018)
Published in ECS transactions (01.01.2018)
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Journal Article
Age and Appearance Shape Behavioral Responses of Phasmids in a Dynamic Environment
Pohl, Sebastian, Bungum, Haaken Z., Lee, Kenneth E. M., Sani, Mohamad Azlin Bin, Poh, Yan H., Wahab, Rodzay bin Hj Abd, Norma-Rashid, Y., Tan, Eunice J.
Published in Frontiers in ecology and evolution (21.01.2022)
Published in Frontiers in ecology and evolution (21.01.2022)
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Journal Article
100 nm T-gate GaN-on-Si HEMTs Fabricated with CMOS-Compatible Metallization for Microwave and mm-Wave Applications
Xie, Hanlin, Liu, Zhihong, Gao, Yu, Lee, Kenneth E., Ng, Geok Ing
Published in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (08.04.2021)
Published in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (08.04.2021)
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Conference Proceeding
CMOS-Compatible InAlN/GaN HEMTs on Silicon for RF Power Amplifiers in 5G Mobile SoCs
Xie, Hanlin, Liu, Zhihong, Hu, Wenrui, Gao, Yu, Lee, Kenneth E., Guo, Yong-Xin, Ng, Geok Ing
Published in 2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) (15.11.2021)
Published in 2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) (15.11.2021)
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Conference Proceeding
Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage Applications
Choi, Pilsoon, Kanargi, Bugra, Lee, Kenneth E., Boon, Chirn-Chye, Wang, Evelyn, Tan, Chuan Seng, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
Published in 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (16.11.2020)
Published in 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (16.11.2020)
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Conference Proceeding
Synthesis, characterization, and structure of acetylenic gallium dialkylphosphides having the formula [(tert-Bu)(Me3SiC.tplbond.C)GaPR2]2 (R = Et, iso-Pr, tert-Bu)
Lee, Kenneth E, Higa, Kelvin T, Nissan, Robin A, Butcher, Raymond J
Published in Organometallics (01.08.1992)
Published in Organometallics (01.08.1992)
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Journal Article
Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f T of 310 GHz
Xie, Hanlin, Liu, Zhihong, Gao, Yu, Ranjan, Kumud, Lee, Kenneth E., Ng, Geok Ing
Published in Applied physics express (01.12.2019)
Published in Applied physics express (01.12.2019)
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Journal Article
First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding
Li, Hanchao, Xie, Hanlin, Wang, Yue, Yulia, Lekina, Ranjan, Kumud, Singh, Navab, Chung, Surasit, Lee, Kenneth E., Arulkumaran, Subramaniam, Ing Ng, Geok
Published in Physica status solidi. A, Applications and materials science (15.05.2024)
Published in Physica status solidi. A, Applications and materials science (15.05.2024)
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Journal Article