Effects of Localized Body Doping on Switching Characteristics of Tunnel FET Inverters With Vertical Structures
Kwon, Dae Woong, Kim, Hyun Woo, Kim, Jang Hyun, Park, Euyhwan, Lee, Junil, Kim, Wandong, Kim, Sangwan, Lee, Jong-Ho, Park, Byung-Gook
Published in IEEE transactions on electron devices (01.04.2017)
Published in IEEE transactions on electron devices (01.04.2017)
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Journal Article
Analysis on New Read Disturbance Induced by Hot Carrier Injections in 3-D Channel-Stacked NAND Flash Memory
Kwon, Dae woong, Kim, Do-Bin, Lee, Junil, Kim, Sihyun, Lee, Ryoongbin, Lee, Jong-Ho, Park, Byung-Gook
Published in IEEE transactions on electron devices (01.08.2019)
Published in IEEE transactions on electron devices (01.08.2019)
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Journal Article
Fabrication Methods for Nanowire Tunnel FET with Locally Concentrated Silicon-germanium Channel
Lee, Junil, Lee, Ryoongbin, Kim, Sihyun, Park, Euyhwan, Kim, Hyun-Min, Lee, Kitae, Kim, Sangwan, Park, Byung-Gook
Published in Journal of semiconductor technology and science (01.02.2019)
Published in Journal of semiconductor technology and science (01.02.2019)
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Journal Article
Analysis on temperature dependent current mechanism of tunnel field-effect transistors
Lee, Junil, Kwon, Dae Woong, Kim, Hyun Woo, Kim, Jang Hyun, Park, Euyhwan, Park, Taehyung, Kim, Sihyun, Lee, Ryoongbin, Lee, Jong-Ho, Park, Byung-Gook
Published in Japanese Journal of Applied Physics (01.06.2016)
Published in Japanese Journal of Applied Physics (01.06.2016)
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Journal Article
Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory
Kwon, Dae Woong, Lee, Junil, Kim, Sihyun, Lee, Ryoongbin, Kim, Sangwan, Lee, Jong-Ho, Park, Byung-Gook
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Demonstration of Tunneling Field-Effect Transistor Ternary Inverter
Kim, Hyun Woo, Kim, Sihyun, Lee, Kitae, Lee, Junil, Park, Byung-Gook, Kwon, Daewoong
Published in IEEE transactions on electron devices (01.10.2020)
Published in IEEE transactions on electron devices (01.10.2020)
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Journal Article
Investigation of Electrical Characteristic Behavior Induced by Channel-Release Process in Stacked Nanosheet Gate-All-Around MOSFETs
Kim, Sihyun, Kim, Munhyeon, Ryu, Donghyun, Lee, Kitae, Kim, Soyoun, Lee, Junil, Lee, Ryoongbin, Kim, Sangwan, Lee, Jong-Ho, Park, Byung-Gook
Published in IEEE transactions on electron devices (01.06.2020)
Published in IEEE transactions on electron devices (01.06.2020)
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Journal Article
I-Shaped SiGe Fin Tunnel Field-Effect Transistor with High I ON / I OFF Ratio
Lee, Ryoongbin, Lee, Junil, Lee, Kitae, Kim, Soyoun, Kim, Sihyun, Kim, Sangwan, Park, Byung-Gook
Published in Journal of nanoscience and nanotechnology (01.07.2020)
Published in Journal of nanoscience and nanotechnology (01.07.2020)
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Journal Article
Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation
Kwon, Min-Woo, Baek, Myung-Hyun, Hwang, Sungmin, Park, Kyungchul, Jang, Tejin, Kim, Taehyung, Lee, Junil, Cho, Seongjae, Park, Byung-Gook
Published in Journal of applied physics (21.10.2018)
Published in Journal of applied physics (21.10.2018)
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Journal Article
Vertically-Stacked Si0.2Ge0.8 Nanosheet Tunnel FET With 70 mV/Dec Average Subthreshold Swing
Lee, Ryoongbin, Lee, Junil, Lee, Kitae, Kim, Soyoun, Ahn, Hyunho, Kim, Sihyun, Kim, Hyun-Min, Kim, Changha, Lee, Jong-Ho, Kim, Sangwan, Park, Byung-Gook
Published in IEEE electron device letters (01.07.2021)
Published in IEEE electron device letters (01.07.2021)
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Journal Article
Vertically-Stacked Si 0.2 Ge 0.8 Nanosheet Tunnel FET With 70 mV/Dec Average Subthreshold Swing
Lee, Ryoongbin, Lee, Junil, Lee, Kitae, Kim, Soyoun, Ahn, Hyunho, Kim, Sihyun, Kim, Hyun-Min, Kim, Changha, Lee, Jong-Ho, Kim, Sangwan, Park, Byung-Gook
Published in IEEE electron device letters (01.07.2021)
Published in IEEE electron device letters (01.07.2021)
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Journal Article
Partial Contact Etching and Gate Lowering on Tunneling Field Effect Transistor for Performance and Power Enhancement
Chang, Jeesoo, Kim, Sihyun, Lee, Junil, Lee, Ryoongbin, Kim, Hyun-Min, Lee, Kitae, Park, Byung-Gook
Published in Journal of nanoscience and nanotechnology (01.10.2019)
Published in Journal of nanoscience and nanotechnology (01.10.2019)
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Journal Article
Tunnel Field Effect Transistor with Ferroelectric Gate Insulator
Lee, Kitae, Lee, Junil, Kim, Sihyun, Park, Euyhwan, Lee, Ryoongbin, Kim, Hyun-Min, Kim, Sangwan, Park, Byung-Gook
Published in Journal of nanoscience and nanotechnology (01.10.2019)
Published in Journal of nanoscience and nanotechnology (01.10.2019)
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Journal Article
Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET
Choi, Yunho, Lee, Kitae, Yeon Kim, Kyoung, Kim, Sihyun, Lee, Junil, Lee, Ryoongbin, Kim, Hyun-Min, Suh Song, Young, Kim, Sangwan, Lee, Jong-Ho, Park, Byung-Gook
Published in Solid-state electronics (01.02.2020)
Published in Solid-state electronics (01.02.2020)
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Journal Article
Surface Ge-rich p-type SiGe channel tunnel field-effect transistor fabricated by local condensation technique
Lee, Junil, Lee, Ryoongbin, Kim, Sihyun, Lee, Kitae, Kim, Hyun-Min, Kim, Soyoun, Kim, Munhyeon, Kim, Sangwan, Lee, Jong-Ho, Park, Byung-Gook
Published in Solid-state electronics (01.02.2020)
Published in Solid-state electronics (01.02.2020)
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Journal Article
MOSFET-TFET hybrid NAND/NOR configuration for improved AC switching performance
Sihyun Kim, Dae Woong Kwon, Jang Hyun Kim, Euyhwan Park, Junil Lee, Taehyung Park, Ryoongbin Lee, Byung-Gook Park
Published in 2016 IEEE Silicon Nanoelectronics Workshop (SNW) (01.06.2016)
Published in 2016 IEEE Silicon Nanoelectronics Workshop (SNW) (01.06.2016)
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Conference Proceeding
Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure
Kim, Hyun-Min, Kwon, Dae Woong, Kim, Sihyun, Lee, Kitae, Lee, Junil, Park, Euyhwan, Lee, Ryoongbin, Kim, Hyungjin, Kim, Sangwan, Park, Byung-Gook
Published in Journal of nanoscience and nanotechnology (01.09.2018)
Published in Journal of nanoscience and nanotechnology (01.09.2018)
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Journal Article