Dependence on an oxide trap’s location of random telegraph noise (RTN) in GIDL current of n-MOSFET
Nguyen Gia, Quan, Yoo, Sung-Won, Lee, Hyunseul, Shin, Hyungcheol
Published in Solid-state electronics (01.02.2014)
Published in Solid-state electronics (01.02.2014)
Get full text
Journal Article
Dependence on an oxide trapas location of random telegraph noise (RTN) in GIDL current of n-MOSFET
Gia, Quan, Yoo, Sung-Won, Lee, Hyunseul, Shin, Hyungcheol
Published in Solid-state electronics (01.02.2014)
Published in Solid-state electronics (01.02.2014)
Get full text
Journal Article