13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate
Jung, Wontaeck, Kim, Hyunggon, Kim, Do-Bin, Kim, Tae-Hyun, Lee, Namhee, Shin, Dongjin, Kim, Minyoung, Rho, Youngsik, Lee, Hun-Jong, Hyun, Yujin, Park, Jaeyoung, Kim, Taekyung, Kim, Hwiwon, Lee, Gyeongwon, Lee, Jisang, Jang, Joonsuc, Park, Jungmin, Kim, Sion, Jeon, Su Chang, Kim, Suyong, Song, Jung-Ho, Kim, Min-Seok, Lee, Taesung, Chun, Byung-Kwan, Kim, Tongsung, Lee, Young Gyu, Lee, Hokil, Lee, Soowoong, Lee, Hwaseok, Cho, Dooho, Nam, Sang-Wan, Kim, Yeomyung, Yoon, Kunyong, Lee, Yoonjae, Kim, Sunghoon, Hwang, Jungseok, Song, Raehyun, Jang, Hyunsik, Son, Jaeick, Jeon, Hongsoo, Lee, Myunghun, Lee, Mookyung, Kim, Kisung, Lee, Eungsuk, Lee, Myeongwoo, Jo, Sungkyu, Kim, Chan Ho, Park, Jong Chul, Yun, Kyunghwa, Seol, Soonock, Cho, Ji-Ho, Lee, Seungjae, Lee, Jin-Yub, Hur, Sung-Hoi
Published in 2024 IEEE International Solid-State Circuits Conference (ISSCC) (18.02.2024)
Published in 2024 IEEE International Solid-State Circuits Conference (ISSCC) (18.02.2024)
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