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Published in IEEE journal of quantum electronics (01.02.2021)
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Integrated high reflectivity silicon substrates for GaN LEDs
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Epitaxial Si and Gd 2 O 3 Heterostructures - Distributed Bragg Reflectors with Stress Management Function for GaN on Si Light Emitting Devices
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Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Growth of GaN by MOCVD on Rare Earth Oxide on Si(111)
Arkun, F. Erdem, Dargis, Rytis, Clark, Andrew, Smith, Robin S., Lebby, Michael, Leathersich, Jeffrey M., Shahedipour-Sandvik, F.
Published in ECS transactions (31.08.2013)
Published in ECS transactions (31.08.2013)
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(Invited) Scalable GaN-on-Silicon Using Rare Earth Oxide Buffer Layers
Arkun, F. Erdem, Lebby, Michael, Dargis, Rytis, Roucka, Radek, Smith, Robin S., Clark, Andrew
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Epitaxial Si, SiGe and Ge on binary and ternary rare earth oxide buffers
Dargis, Rytis, Arkun, Erdem F., Roucka, Radek, Smith, Robin, Williams, David, Clark, Andrew, Lebby, Michael
Published in Physica status solidi. C (01.10.2012)
Published in Physica status solidi. C (01.10.2012)
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