Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance
Suvarna, Puneet, Bulmer, John, Leathersich, Jeffrey M., Marini, Jonathan, Mahaboob, Isra, Hennessy, John, Bell, L. Douglas, Nikzad, Shouleh, Shahedipour-Sandvik, F. Shadi
Published in IEEE photonics technology letters (01.03.2015)
Published in IEEE photonics technology letters (01.03.2015)
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Journal Article
The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates
Gagnon, Jarod C., Leathersich, Jeffrey M., Shahedipour-Sandvik, Fatemeh (Shadi), Redwing, Joan M.
Published in Journal of crystal growth (01.05.2014)
Published in Journal of crystal growth (01.05.2014)
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Conference Proceeding
Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates
Suvarna, Puneet, Tungare, Mihir, Leathersich, Jeffrey M., Agnihotri, Pratik, Shahedipour-Sandvik, F., Douglas Bell, L., Nikzad, Shouleh
Published in Journal of electronic materials (01.05.2013)
Published in Journal of electronic materials (01.05.2013)
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Journal Article
Conference Proceeding
Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy
Leathersich, Jeffrey M., Tungare, Mihir, Weng, Xiaojun, Suvarna, Puneet, Agnihotri, Pratik, Evans, Morgan, Redwing, Joan, Shahedipour-Sandvik, F.
Published in Journal of electronic materials (01.05.2013)
Published in Journal of electronic materials (01.05.2013)
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Journal Article
Conference Proceeding
Growth of GaN by MOCVD on Rare Earth Oxide on Si(111)
Arkun, F. Erdem, Dargis, Rytis, Clark, Andrew, Smith, Robin S., Lebby, Michael, Leathersich, Jeffrey M., Shahedipour-Sandvik, F.
Published in ECS transactions (31.08.2013)
Published in ECS transactions (31.08.2013)
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