Ga2O3‑on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics
Song, Yiwen, Shoemaker, Daniel, Leach, Jacob H, McGray, Craig, Huang, Hsien-Lien, Bhattacharyya, Arkka, Zhang, Yingying, Gonzalez-Valle, C. Ulises, Hess, Tina, Zhukovsky, Sarit, Ferri, Kevin, Lavelle, Robert M, Perez, Carlos, Snyder, David W, Maria, Jon-Paul, Ramos-Alvarado, Bladimir, Wang, Xiaojia, Krishnamoorthy, Sriram, Hwang, Jinwoo, Foley, Brian M, Choi, Sukwon
Published in ACS applied materials & interfaces (01.09.2021)
Published in ACS applied materials & interfaces (01.09.2021)
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Journal Article
Ultra-Wide Band Gap Ga2O3‑on-SiC MOSFETs
Song, Yiwen, Bhattacharyya, Arkka, Karim, Anwarul, Shoemaker, Daniel, Huang, Hsien-Lien, Roy, Saurav, McGray, Craig, Leach, Jacob H., Hwang, Jinwoo, Krishnamoorthy, Sriram, Choi, Sukwon
Published in ACS applied materials & interfaces (08.02.2023)
Published in ACS applied materials & interfaces (08.02.2023)
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Journal Article
Low‐Pressure, Modified Halide Vapor‐Phase Epitaxy for Chemically Pure GaN Epilayers
Leach, Jacob H., Udwary, Kevin, Dodson, Gregg, Tran, Tinh B., Splawn, Heather A.
Published in physica status solidi (b) (01.11.2024)
Published in physica status solidi (b) (01.11.2024)
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Ultra-Wide Band Gap Ga 2 O 3 -on-SiC MOSFETs
Song, Yiwen, Bhattacharyya, Arkka, Karim, Anwarul, Shoemaker, Daniel, Huang, Hsien-Lien, Roy, Saurav, McGray, Craig, Leach, Jacob H, Hwang, Jinwoo, Krishnamoorthy, Sriram, Choi, Sukwon
Published in ACS applied materials & interfaces (08.02.2023)
Published in ACS applied materials & interfaces (08.02.2023)
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Journal Article
Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu-A Summary of Recent Results
Edwards, Paul R, O'Donnell, Kevin P, Singh, Akhilesh K, Cameron, Douglas, Lorenz, Katharina, Yamaga, Mitsuo, Leach, Jacob H, Kappers, Menno J, Boćkowski, Michal
Published in Materials (22.09.2018)
Published in Materials (22.09.2018)
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Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping
Slomski, Michael, Paskov, Plamen P., Leach, Jacob H., Muth, John F., Paskova, Tania
Published in Physica status solidi. B, Basic research (01.08.2017)
Published in Physica status solidi. B, Basic research (01.08.2017)
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Indium Tin Oxide (ITO) based Ohmic Contacts on Bulk n-GaN Substrate
Uppalapati, Balaadithya, Kota, Akash, Azad, Samee, Muthusamy, Lavanya, Tran, Binh Tinh, Leach, Jacob H., Splawn, Heather, Gajula, Durga, Chodavarapu, Vamsy P., Koley, Goutam
Published in ECS journal of solid state science and technology (01.11.2022)
Published in ECS journal of solid state science and technology (01.11.2022)
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Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates
Briggs, Natalie, Preciado, Maria Isolina, Lu, Yanfu, Wang, Ke, Leach, Jacob, Li, Xufan, Xiao, Kai, Subramanian, Shruti, Wang, Baoming, Haque, Aman, Sinnott, Susan, Robinson, Joshua A
Published in Nanotechnology (23.11.2018)
Published in Nanotechnology (23.11.2018)
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Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy
Schulte, Kevin L, Metaferia, Wondwosen, Simon, John, Guiling, David, Udwary, Kevin, Dodson, Gregg, Leach, Jacob H, Ptak, Aaron J
Published in ACS applied energy materials (23.12.2019)
Published in ACS applied energy materials (23.12.2019)
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Journal Article
2″-4″ diameter GaN-on-sapphire substrates free of wafer bow at all temperatures
Preble, Edward A., Leach, Jacob H., Metzger, Robert, Shishkin, Eugene, Udwary, Kevin A.
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Journal Article
HVPE GaN for high power electronic Schottky diodes
Tompkins, Randy P., Walsh, Timothy A., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Nguyen, Cuong B., Jones, Kenneth A., Mulholland, Gregory, Metzger, Robert, Leach, Jacob H., Suvarna, Puneet, Tungare, Mihir, Shahedipour-Sandvik, Fatemeh (Shadi)
Published in Solid-state electronics (01.01.2013)
Published in Solid-state electronics (01.01.2013)
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Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric
Kayis, C, Leach, J H, Zhu, C Y, Wu, M, Li, X, Özgür, Ümit, Morkoç, H, Yang, X, Misra, V, Handel, P H
Published in IEEE electron device letters (01.09.2010)
Published in IEEE electron device letters (01.09.2010)
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Journal Article
High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga's Figure of Merit Over 1 GW/cm2
Roy, Saurav, Bhattacharyya, Arkka, Ranga, Praneeth, Splawn, Heather, Leach, Jacob, Krishnamoorthy, Sriram
Published in IEEE electron device letters (01.08.2021)
Published in IEEE electron device letters (01.08.2021)
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Journal Article
Measurements of generation-recombination effect by low-frequency phase-noise technique in AlGaN/GaN MOSHFETs
Kayis, Cemil, Leach, Jacob H., Zhu, C.Y., Wu, Mo, Li, X., Özgür, Ümit, Morkoç, Hadis, Yang, X., Misra, Veena, Handel, Peter H.
Published in Physica status solidi. C (01.05.2011)
Published in Physica status solidi. C (01.05.2011)
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Journal Article
Microstructure and field mapping of AlInN-based heterostructures and devices
Zhou, Lin, Cullen, David A, McCartney, Martha R., Leach, Jacob H., Fan, Qian, Morkoç, Hadis, Smith, David J.
Published in Physica status solidi. C (01.10.2010)
Published in Physica status solidi. C (01.10.2010)
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Journal Article
Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures
Leach, Jacob H., Wu, Mo, Ni, Xianfeng, Li, Xing, Özgür, Ümit, Morkoç, Hadis, Liberis, Juozas, Šermukšnis, Emilis, Matulionis, Arvydas, Cheng, Hailing, Kurdak, Çagliyan, Moon, Yong-Tae
Published in Physica status solidi. A, Applications and materials science (01.06.2010)
Published in Physica status solidi. A, Applications and materials science (01.06.2010)
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High-k Oxide Field-Plated Vertical (001) β-Ga 2 O 3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm 2
Roy, Saurav, Bhattacharyya, Arkka, Ranga, Praneeth, Splawn, Heather, Leach, Jacob, Krishnamoorthy, Sriram
Published in IEEE electron device letters (01.08.2021)
Published in IEEE electron device letters (01.08.2021)
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