Evaluation of the concentration of point defects in GaN
Reshchikov, M A, Usikov, A, Helava, H, Makarov, Yu, Prozheeva, V, Makkonen, I, Tuomisto, F, Leach, J H, Udwary, K
Published in Scientific reports (24.08.2017)
Published in Scientific reports (24.08.2017)
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Journal Article
Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment
Paskov, P. P., Slomski, M., Leach, J. H., Muth, J. F., Paskova, T.
Published in AIP advances (01.09.2017)
Published in AIP advances (01.09.2017)
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Journal Article
Anisotropic optical constants, birefringence, and dichroism of wurtzite GaN between 0.6 eV and 6 eV
Shokhovets, S., Kirste, L., Leach, J. H., Krischok, S., Himmerlich, M.
Published in Journal of applied physics (28.07.2017)
Published in Journal of applied physics (28.07.2017)
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Journal Article
Photoexcited carrier trapping and recombination at Fe centers in GaN
Uždavinys, T. K., Marcinkevičius, S., Leach, J. H., Evans, K. R., Look, D. C.
Published in Journal of applied physics (07.06.2016)
Published in Journal of applied physics (07.06.2016)
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Journal Article
Exercise preferences, levels and quality of life in lung cancer survivors
Leach, H. J., Devonish, J. A., Bebb, D. G., Krenz, K. A., Culos-Reed, S. N.
Published in Supportive care in cancer (01.11.2015)
Published in Supportive care in cancer (01.11.2015)
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Journal Article
The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures
Teke, A, Gökden, S, Tülek, R, Leach, J H, Fan, Q, Xie, J, Özgür, Ü, Morkoç, H, Lisesivdin, S B, Özbay, E
Published in New journal of physics (16.06.2009)
Published in New journal of physics (16.06.2009)
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Journal Article
Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells
Rosales, D., Gil, B., Bretagnon, T., Guizal, B., Zhang, F., Okur, S., Monavarian, M., Izyumskaya, N., Avrutin, V., Özgür, Ü., Morkoç, H., Leach, J. H.
Published in Journal of applied physics (21.02.2014)
Published in Journal of applied physics (21.02.2014)
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Journal Article
Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels
Matulionis, A, Liberis, J, Šermukšnis, E, Xie, J, Leach, J H, Wu, M, Morkoç, H
Published in Semiconductor science and technology (01.07.2008)
Published in Semiconductor science and technology (01.07.2008)
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Journal Article
GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates
Tompkins, R. P., Smith, J. R., Kirchner, K. W., Jones, K. A., Leach, J. H., Udwary, K., Preble, E., Suvarna, P., Leathersich, J.M., Shahedipour-Sandvik, F.
Published in Journal of electronic materials (01.04.2014)
Published in Journal of electronic materials (01.04.2014)
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Journal Article
Conference Proceeding
Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel
Gökden, S, Tülek, R, Teke, A, Leach, J H, Fan, Q, Xie, J, Özgür, Ü, Morkoç, H, Lisesivdin, S B, Özbay, E
Published in Semiconductor science and technology (01.04.2010)
Published in Semiconductor science and technology (01.04.2010)
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Journal Article
Iron dopant energy levels in β-Ga2O3
Angeloni, Louis A., Shan, I.-J., Leach, J. H., Schroeder, W. Andreas
Published in Applied physics letters (17.06.2024)
Published in Applied physics letters (17.06.2024)
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Journal Article
Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films
Leach, J. H., Udwary, K., Rumsey, J., Dodson, G., Splawn, H., Evans, K. R.
Published in APL materials (01.02.2019)
Published in APL materials (01.02.2019)
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Journal Article
Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors
Šimukovi, A, Matulionis, A, Liberis, J, Šermukšnis, E, Sakalas, P, Zhang, F, Leach, J H, Avrutin, V, Morkoç, H
Published in Semiconductor science and technology (10.05.2013)
Published in Semiconductor science and technology (10.05.2013)
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Journal Article
Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures
Leach, J. H., Wu, M., Ni, X., Li, X., Özgür, Ü., Morkoç, H.
Published in Physica status solidi. A, Applications and materials science (01.01.2010)
Published in Physica status solidi. A, Applications and materials science (01.01.2010)
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Journal Article
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., Chua, C. L., Collazo, R., Coltrin, M. E., Cooper, J. A., Evans, K. R., Graham, S., Grotjohn, T. A., Heller, E. R., Higashiwaki, M., Islam, M. S., Juodawlkis, P. W., Khan, M. A., Koehler, A. D., Leach, J. H., Mishra, U. K., Nemanich, R. J., Pilawa‐Podgurski, R. C. N., Shealy, J. B., Sitar, Z., Tadjer, M. J., Witulski, A. F., Wraback, M., Simmons, J. A.
Published in Advanced electronic materials (01.01.2018)
Published in Advanced electronic materials (01.01.2018)
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Journal Article
Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence
McNamara, J. D., Foussekis, M. A., Baski, A. A., Li, X., Avrutin, V., Morkoç, H., Leach, J. H., Paskova, T., Udwary, K., Preble, E., Reshchikov, M. A.
Published in Physica status solidi. C (01.03.2013)
Published in Physica status solidi. C (01.03.2013)
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Journal Article
Effect of local fields on the Mg acceptor in GaN films and GaN substrates
Zvanut, M. E., Dashdorj, J., Sunay, U. R., Leach, J. H., Udwary, K.
Published in Journal of applied physics (07.10.2016)
Published in Journal of applied physics (07.10.2016)
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