Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
Koester, R, Hwang, J S, Durand, C, Le Si Dang, D, Eymery, J
Published in Nanotechnology (08.01.2010)
Published in Nanotechnology (08.01.2010)
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Journal Article
Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers
Willander, M, Nur, O, Zhao, Q X, Yang, L L, Lorenz, M, Cao, B Q, Zúñiga Pérez, J, Czekalla, C, Zimmermann, G, Grundmann, M, Bakin, A, Behrends, A, Al-Suleiman, M, El-Shaer, A, Che Mofor, A, Postels, B, Waag, A, Boukos, N, Travlos, A, Kwack, H S, Guinard, J, Le Si Dang, D
Published in Nanotechnology (19.08.2009)
Published in Nanotechnology (19.08.2009)
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Journal Article
Spatial fluctuations of optical emission from single ZnO/MgZnO nanowire quantum wells
Czekalla, C, Guinard, J, Hanisch, C, Cao, B Q, Kaidashev, E M, Boukos, N, Travlos, A, Renard, J, Gayral, B, Le Si Dang, D, Lorenz, M, Grundmann, M
Published in Nanotechnology (19.03.2008)
Published in Nanotechnology (19.03.2008)
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Journal Article
Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate
Chen, X.J., Hwang, J.S., Perillat-Merceroz, G., Landis, S., Martin, B., Le Si Dang, D., Eymery, J., Durand, C.
Published in Journal of crystal growth (01.05.2011)
Published in Journal of crystal growth (01.05.2011)
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Journal Article
Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC
Bano, N., Hussain, I., Nur, O., Willander, M., Wahab, Q., Henry, A., Kwack, H.S., Le Si Dang, D.
Published in Journal of luminescence (01.06.2010)
Published in Journal of luminescence (01.06.2010)
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The growth and rare-earth doping of GaN quantum dots on Alx Ga1-x N layer by plasma-assisted molecular beam epitaxy
Hori, Y., Andreev, T., Bellet-Amalric, E., Oda, O., Le Si Dang, D., Daudin, B.
Published in Physica status solidi. A, Applications and materials science (01.01.2007)
Published in Physica status solidi. A, Applications and materials science (01.01.2007)
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Journal Article
Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy
Brault, J., Bellet-Amalric, E., Tanaka, S., Enjalbert, F., Le Si Dang, D., Sarigiannidou, E., Rouviere, J.-L., Feuillet, G., Daudin, B.
Published in Phys. Status Solidi (b). Vol. 240, no. 2, pp. 314-317. 2003 (01.11.2003)
Published in Phys. Status Solidi (b). Vol. 240, no. 2, pp. 314-317. 2003 (01.11.2003)
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Journal Article
Conference Proceeding
Coherent dynamics of microcavity polaritons in the nonlinear regime
Huynh, A, Tignon, J, Roussignol, Ph, Delalande, C, André, R, Romestain, R, Le Si Dang, D
Published in Physica. E, Low-dimensional systems & nanostructures (01.03.2002)
Published in Physica. E, Low-dimensional systems & nanostructures (01.03.2002)
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Journal Article
Electro-optical and cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emitting diodes
Kishwar, S., Hasan, K. ul, Tzamalis, G., Nur, O., Willander, M., Kwack, H. S., Dang, D. Le Si
Published in Physica status solidi. A, Applications and materials science (01.01.2010)
Published in Physica status solidi. A, Applications and materials science (01.01.2010)
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Journal Article
The growth and rare‐earth doping of GaN quantum dots on Al x Ga 1– x N layer by plasma‐assisted molecular beam epitaxy
Hori, Y., Andreev, T., Bellet‐Amalric, E., Oda, O., Le Si Dang, D., Daudin, B.
Published in Physica status solidi. A, Applications and materials science (01.01.2007)
Published in Physica status solidi. A, Applications and materials science (01.01.2007)
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Journal Article