Photoluminescence studies of In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As metamorphic heterostructures on GaAs substrates
Galiev, G. B., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Pushkarev, S. S., Maltsev, P. P.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2014)
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Journal Article
Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well
Galiev, G. B., Vasil’evskii, I. S., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Pushkarev, S. S., Maltsev, P. P.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2015)
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Journal Article
Photoluminescence properties of modulation-doped In{sub x}Al{sub 1–x}As/In{sub y}Ga{sub 1–y}As/In{sub x}Al{sub 1–x}As structures with strained inas and gaas nanoinserts in the quantum well
Galiev, G. B., Vasil’evskii, I. S., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Pushkarev, S. S., Maltsev, P. P.
Published in Semiconductors (Woodbury, N.Y.) (15.09.2015)
Published in Semiconductors (Woodbury, N.Y.) (15.09.2015)
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Journal Article
Photoluminescence properties of modulation-doped In x Al1–x As/In y Ga1–y As/In x Al1–x As structures with strained inas and gaas nanoinserts in the quantum well
Galiev, G. B., Vasil’evskii, I. S., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Pushkarev, S. S., Maltsev, P. P.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2015)
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Journal Article
Application of photoluminescence spectroscopy to studies of In0.38Al0.62As/In0.38Ga0.62As/GaAs metamorphic nanoheterostructures
Galiev, G. B., Vasil’evskii, I. S., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Pushkarev, S. S., Maltsev, P. P.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2014)
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Journal Article
Photoluminescence properties of modulation-doped InxAl1–xAs/InyGa1–yAs/InxAl1–xAs structures with strained inas and gaas nanoinserts in the quantum well
Galiev, G. B., Vasil’evskii, I. S., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Pushkarev, S. S., Maltsev, P. P.
Published in Semiconductors (Woodbury, N.Y.) (2015)
Published in Semiconductors (Woodbury, N.Y.) (2015)
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Journal Article
Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well
Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Maltsev, P. P., Pushkarev, S. S., Trunkin, I. N.
Published in Crystallography reports (01.05.2015)
Published in Crystallography reports (01.05.2015)
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Journal Article
Structural and electrophysical properties of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well
Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Maltsev, P. P., Pushkarev, S. S., Trunkin, I. N.
Published in Crystallography reports (15.05.2015)
Published in Crystallography reports (15.05.2015)
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Journal Article