Search Results - "Lau, Wai Shing" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

AFM study on the surface morphologies of TiN films prepared by magnetron sputtering and Al2O3 films prepared by atomic layer deposition

AFM study on the surface morphologies of TiN films prepared by magnetron sputtering and Al2O3 films prepared by atomic layer deposition

by Du, Li, Wong, Hei, Dong, Shurong, Lau, Wai-Shing, Filip, V.
Published in Vacuum (01.07.2018)

Get full text

Journal Article

Application of BW-ELM model on traffic sign recognition

Application of BW-ELM model on traffic sign recognition

by Sun, Zhan-Li, Wang, Han, Lau, Wai-Shing, Seet, Gerald, Wang, Danwei
Published in Neurocomputing (Amsterdam) (27.03.2014)

Get full text

Journal Article Conference Proceeding

Robust Real-Time Shipboard Energy Management System With Improved Adaptive Model Predictive Control

Robust Real-Time Shipboard Energy Management System With Improved Adaptive Model Predictive Control

by Chen, Wenjie, Tai, Kang, Lau, Michael Wai Shing, Abdelhakim, Ahmed, Chan, Ricky R., Adnanes, Alf Kare, Tjahjowidodo, Tegoeh
Published in IEEE access (2023)

Get full text

Journal Article

Waiter Robots Conveying Drinks

Waiter Robots Conveying Drinks

by Wan, Ash Yaw Sang, Soong, Yi De, Foo, Edwin, Wong, Wai Leong Eugene, Lau, Wai Shing Michael
Published in Technologies (Basel) (01.09.2020)

Get full text

Journal Article

Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy

Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy

by Eng, Chee-Wee, Lau, Wai-Shing, Jiang, Yao-Yao, Vigar, David, Tee, Kheng-Chok, Chan, Lap, Lim, Vanissa Sei-Wei, Trigg, Alastair
Published in Japanese Journal of Applied Physics (01.04.2004)

Get full text

Journal Article

Effective Channel Length Shortening and Mobility Increase of p-Channel Metal Oxide Semiconductor Transistors Resulting in Higher Drive Current Using Short Source–Drain Diffusion Length

Effective Channel Length Shortening and Mobility Increase of p-Channel Metal Oxide Semiconductor Transistors Resulting in Higher Drive Current Using Short Source–Drain Diffusion Length

by See, Kwang-Seng, Lau, Wai-Shing, Liao, Hong, Eng, Chee-Wee, Tee, Kian-Meng, Quek, Elgin Kiok-Boone, Tee, Kheng-Chok, Chan, Lap-Hung
Published in Japanese Journal of Applied Physics (2004)

Get full text

Journal Article

Enhanced Hot-Hole Induced Degradation of Strained p-Channel Metal Oxide Semiconductor Transistors in Complementary Metal Oxide Semiconductor Technology with 2.0 nm Gate Oxide

Enhanced Hot-Hole Induced Degradation of Strained p-Channel Metal Oxide Semiconductor Transistors in Complementary Metal Oxide Semiconductor Technology with 2.0 nm Gate Oxide

by See, Kwang-Seng, Lau, Wai-Shing, Lee, Jae Gon, Toh, Suey-Li, Liao, Hong, Li, Kun, Quek, Elgin Kiok-Boone, Chan, Lap-Hung
Published in Japanese Journal of Applied Physics (01.08.2005)

Get full text

Journal Article

Benchmark Models of Control System Design for Remotely Operated Vehicles

Benchmark Models of Control System Design for Remotely Operated Vehicles

by Chin, Cheng Siong, Lau, Michael Wai Shing
Year of Publication 2020

Get full text

eBook

An Improved Shift-and-Ratio Effective Channel Length Extraction Method for Metal Oxide Silicon Transistors with Halo/Pocket Implants

An Improved Shift-and-Ratio Effective Channel Length Extraction Method for Metal Oxide Silicon Transistors with Halo/Pocket Implants

by Eng, Chee-Wee, Lau, Wai-Shing, Vigar, David, Lee, James Yong-Meng
Published in Japanese Journal of Applied Physics (2003)

Get full text

Journal Article

Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors

Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors

by WAI SHING LAU, PENG WEI QIAN, SANDLER, N. P, MCKINLEY, K. A, CHU, P. K
Published in Japanese journal of applied physics (1997)

Get full text

Journal Article

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond Part II

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond Part II

by Lau, Wai Shing
Published in ECS transactions (20.05.2022)

Get full text

Journal Article

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga 2 O 3 or Diamond Part II

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga 2 O 3 or Diamond Part II

by Lau, Wai Shing
Published in ECS transactions (20.05.2022)

Get full text

Journal Article

Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer

Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer

by Phua, Cheng Chiang, Tow Chong Chong, Tow Chong Chong, Wai Shing Lau, Wai Shing Lau
Published in Japanese Journal of Applied Physics (1994)

Get full text

Journal Article

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond

by Lau, Wai Shing
Published in ECS transactions (24.04.2020)

Get full text

Journal Article

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga 2 O 3 or Diamond

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga 2 O 3 or Diamond

by Lau, Wai Shing
Published in ECS transactions (24.04.2020)

Get full text

Journal Article

A comparison of various dielectric/metal sidewall diffusion barriers for Cu/porous ultra-low-K interconnect technology in terms of leakage current and breakdown voltage

A comparison of various dielectric/metal sidewall diffusion barriers for Cu/porous ultra-low-K interconnect technology in terms of leakage current and breakdown voltage

by Lau, Wai-Shing, Tan, Hwa-Jin, Chen, Zhe, Li, Chao-Yong
Published in Vacuum (25.05.2007)

Get full text

Journal Article

A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy

A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy

by LAU, W. S, KHAW, K. K, QIAN, P. W, SANDLER, N. P, CHU, P. K
Published in Japanese journal of applied physics (1996)

Get full text

Journal Article

Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications

Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications

by WAI SHING LAU, THIAM SIEW TAN, SANDLER, N. P, PAGE, B. S
Published in Japanese Journal of Applied Physics (1995)

Get full text

Conference Proceeding Journal Article

The Development of a New Ion Versus Log(Ig) Plot to Characterize Depletion-Mode High Electron Mobility Transistors with the Insertion of a Very Thin Evaporated Al Layer to AlGaN/GaN High Electron Mobility Transistors as an Example

The Development of a New Ion Versus Log(Ig) Plot to Characterize Depletion-Mode High Electron Mobility Transistors with the Insertion of a Very Thin Evaporated Al Layer to AlGaN/GaN High Electron Mobility Transistors as an Example

by Lau, Wai Shing, Tan, Joy
Published in ECS transactions (24.04.2020)

Get full text

Journal Article

The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs

The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs

by LAU, W. S, CHOR, E. F, KEK, S. P, ABDUL AZIZ, W. H. B, LIM, H. C, HENG, C. H, ZHAO, R
Published in Japanese journal of applied physics (1997)

Get full text

Journal Article