Evidence of Mg Segregation to Threading Dislocation in Normally-Off GaN-HEMT
Duguay, Sebastien, Echeverri, Andres, Castro, Celia, Latry, Olivier
Published in IEEE transactions on nanotechnology (01.01.2019)
Published in IEEE transactions on nanotechnology (01.01.2019)
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Journal Article
Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures
Moultif, Niemat, Divay, Alexis, Joubert, Eric, Latry, Olivier
Published in Engineering failure analysis (01.11.2017)
Published in Engineering failure analysis (01.11.2017)
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Journal Article
Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET
Lüders, Ulrike, Michez, Alain, Niskanen, Kimmo, Latry, Olivier, Germanicus, Rosine Coq, Moultif, Niemat, Jouha, Wadia, Boch, Jerôme, Touboul, Antoine D.
Published in Materials science forum (31.05.2022)
Published in Materials science forum (31.05.2022)
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An athermal measurement technique for long traps characterization in GaN HEMT transistors
Divay, A, Masmoudi, Mohamed Lamine, Latry, Olivier, Duperrier, C, Temcamani, Farid
Published in Microelectronics and reliability (01.09.2015)
Published in Microelectronics and reliability (01.09.2015)
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Journal Article
Optimizing Atom Probe Analysis with Synchronous Laser Pulsing and Voltage Pulsing
Zhao, Lu, Normand, Antoine, Houard, Jonathan, Blum, Ivan, Delaroche, Fabien, Latry, Olivier, Ravelo, Blaise, Vurpillot, Francois
Published in Microscopy and microanalysis (01.04.2017)
Published in Microscopy and microanalysis (01.04.2017)
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Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)
Coq Germanicus, Rosine, Lallemand, Florent, Chateigner, Daniel, Jouha, Wadia, Moultif, Niemat, Latry, Olivier, Fouchet, Arnaud, Murray, Hugues, Bunel, Catherine, Lüders, Ulrike
Published in Nano express (01.03.2021)
Published in Nano express (01.03.2021)
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