Monolithic integration of InP-based transistors on Si substrates using MBE
Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Bulsara, M.T., Fitzgerald, E.A., Urteaga, M., Ha, W., Bergman, J., Brar, B., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E., Clark, D., Smith, D., Thompson, R.F., Drazek, C., Daval, N.
Published in Journal of crystal growth (15.03.2009)
Published in Journal of crystal growth (15.03.2009)
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Conference Proceeding
Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO
Ip, K, Gila, B.P, Onstine, A.H, Lambers, E.S, Heo, Y.W, Baik, K.H, Norton, D.P, Pearton, S.J, Kim, S, LaRoche, J.R, Ren, F
Published in Applied surface science (15.09.2004)
Published in Applied surface science (15.09.2004)
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Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor
Chang, P.C., Li, N.Y., Baca, A.G., Hou, H.Q., Monier, C., Laroche, J.R., Ren, F., Pearton, S.J.
Published in IEEE electron device letters (01.03.2001)
Published in IEEE electron device letters (01.03.2001)
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ZnO nanowire growth and devices
Heo, Y.W., Norton, D.P., Tien, L.C., Kwon, Y., Kang, B.S., Ren, F., Pearton, S.J., LaRoche, J.R.
Published in Materials science & engineering. R, Reports : a review journal (20.12.2004)
Published in Materials science & engineering. R, Reports : a review journal (20.12.2004)
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Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications
Monier, C, Chang, P.C, Li, N.Y, LaRoche, J.R, Baca, A.G, Hou, H.Q, Ren, F, Pearton, S.J
Published in Solid-state electronics (01.09.2000)
Published in Solid-state electronics (01.09.2000)
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A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates
Kazior, T.E., LaRoche, J.R., Lubyshev, D., Fastenau, J.M., Liu, W.K., Urteaga, M., Ha, W., Bergman, J., Choe, M.J., Bulsara, M.T., Fitzgerald, E.A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., Augendre, E.
Published in 2009 IEEE MTT-S International Microwave Symposium Digest (01.06.2009)
Published in 2009 IEEE MTT-S International Microwave Symposium Digest (01.06.2009)
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Conference Proceeding
GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
LaRoche, J.R., Luo, B., Ren, F., Baik, K.H., Stodilka, D., Gila, B., Abernathy, C.R., Pearton, S.J., Usikov, A., Tsvetkov, D., Soukhoveev, V., Gainer, G., Rechnikov, A., Dimitriev, V., Chen, G.-T., Pan, C.-C., Chyi, J.-I.
Published in Solid-state electronics (2004)
Published in Solid-state electronics (2004)
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Progress and challenges in the direct monolithic integration of III-V devices and Si CMOS on silicon substrates
Kazior, T.E., LaRoche, J.R., Lubyshev, D., Fastenau, J.M., Liu, W.K., Urteaga, M., Ha, W., Bergman, J., Choe, M.J., Bulsara, M.T., Fitzgerald, E.A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., Augendre, E.
Published in 2009 IEEE International Conference on Indium Phosphide & Related Materials (01.05.2009)
Published in 2009 IEEE International Conference on Indium Phosphide & Related Materials (01.05.2009)
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Conference Proceeding
Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration
Yang, N., Bulsara, M.T., Fitzgerald, E.A., Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Urteaga, M., Ha, W., Bergman, J., Brar, B., Drazekd, C., Daval, N., Benaissa, L., Augendre, E., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E.
Published in 2009 IEEE International SOI Conference (01.10.2009)
Published in 2009 IEEE International SOI Conference (01.10.2009)
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Conference Proceeding
2.6 A, 0.69 MW cm −2 single-chip bulk GaN p-i-n rectifier
Irokawa, Y., Luo, B., Kang, B.S., Kim, Jihyun, LaRoche, J.R., Ren, F., Baik, K.H., Pearton, S.J., Pan, C.-C., Chen, G.-T., Chyi, J.-I., Park, S.S., Park, Y.J.
Published in Solid-state electronics (01.02.2004)
Published in Solid-state electronics (01.02.2004)
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GaN/AlGaN HBT fabrication
Ren, F, Han, J, Hickman, R, Van Hove, J.M, Chow, P.P, Klaassen, J.J, LaRoche, J.R, Jung, K.B, Cho, H, Cao, X.A, Donovan, S.M, Kopf, R.F, Wilson, R.G, Baca, A.G, Shul, R.J, Zhang, L, Willison, C.G, Abernathy, C.R, Pearton, S.J
Published in Solid-state electronics (01.02.2000)
Published in Solid-state electronics (01.02.2000)
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Journal Article
MBE growth of InP-HBT structures on Ge-on-insulator/Si substrates by MBE
Lubyshev, D., Fastenau, J.M., Wu, Y., Liu, W.K., Urteaga, M., Ha, W., Bergman, J., Brar, B., Bulsara, M.T., Fitzgerald, E.A., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E.
Published in 2008 20th International Conference on Indium Phosphide and Related Materials (01.05.2008)
Published in 2008 20th International Conference on Indium Phosphide and Related Materials (01.05.2008)
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Conference Proceeding
W-band metamorphic HEMT with 267 mW output power
Herrick, K.J., Brown, K.W., Rose, F.A., Whelan, C.S., Kotce, J., Laroche, J.R., Yiwen Zhang
Published in IEEE MTT-S International Microwave Symposium Digest, 2005 (2005)
Published in IEEE MTT-S International Microwave Symposium Digest, 2005 (2005)
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Conference Proceeding
Implanted p– n junctions in GaN
Cao, X.A, LaRoche, J.R, Ren, F, Pearton, S.J, Lothian, J.R, Singh, R.K, Wilson, R.G, Guo, H.J, Pennycook, S.J
Published in Solid-state electronics (1999)
Published in Solid-state electronics (1999)
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Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors
LaRoche, J.R., Ren, F., Temple, D., Pearton, S.J., Kuo, J.M., Baca, A.G., Cheng, P., Park, Y.D., Hudspeth, Q., Hebard, A.F., Arnason, S.B.
Published in Solid-state electronics (01.12.2000)
Published in Solid-state electronics (01.12.2000)
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Journal Article
Monolithic III-V/Si integration
Fitzgerald, E.A., Bulsara, M.T., Bai, Y., Cheng, C., Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Urtega, M., Ha, W., Bergman, J., Brar, B., Drazek, C., Daval, N., Letertre, F., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E.
Published in 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (01.10.2008)
Published in 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (01.10.2008)
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Conference Proceeding
First demonstration of the AlGaAs-InGaAsN-GaAs P-n-P double heterojunction bipolar transistor
Chang, P.C., Li, N.Y., Laroche, J.R., Monier, C., Baca, A.G., Hou, H.Q., Ren, F., Pearton, S.J.
Published in 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) (2000)
Published in 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) (2000)
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Conference Proceeding
Annealing temperature dependence of contact resistance and stability for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO
Ip, K., Baik, K.H., Heo, Y.W., Norton, D.P., Pearton, S.J., LaRoche, J.R., Luo, B., Ren, F., Zavada, J.M.
Published in 2003 International Symposium on Compound Semiconductors (2003)
Published in 2003 International Symposium on Compound Semiconductors (2003)
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