Dislocation dynamics in relaxed graded composition semiconductors
Fitzgerald, E.A, Kim, A.Y, Currie, M.T, Langdo, T.A, Taraschi, G, Bulsara, M.T
Published in Materials science & engineering. B, Solid-state materials for advanced technology (08.12.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (08.12.1999)
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Conference Proceeding
Strained Si on insulator technology: from materials to devices
Langdo, T.A, Currie, M.T, Cheng, Z.-Y, Fiorenza, J.G, Erdtmann, M, Braithwaite, G, Leitz, C.W, Vineis, C.J, Carlin, J.A, Lochtefeld, A, Bulsara, M.T, Lauer, I, Antoniadis, D.A, Somerville, M
Published in Solid-state electronics (01.08.2004)
Published in Solid-state electronics (01.08.2004)
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Journal Article
Fully depleted n-MOSFETs on supercritical thickness strained SOI
Lauer, I., Langdo, T.A., Cheng, Z.-Y., Fiorenza, J.G., Braithwaite, G., Currie, M.T., Leitz, C.W., Lochtefeld, A., Badawi, H., Bulsara, M.T., Somerville, M., Antoniadis, D.A.
Published in IEEE electron device letters (01.02.2004)
Published in IEEE electron device letters (01.02.2004)
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Journal Article
Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates
Leitz, C.W., Vineis, C.J., Carlin, J., Fiorenza, J., Braithwaite, G., Westhoff, R., Yang, V., Carroll, M., Langdo, T.A., Matthews, K., Kohli, P., Rodder, M., Wise, R., Lochtefeld, A.
Published in Thin solid films (14.08.2006)
Published in Thin solid films (14.08.2006)
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Journal Article
Transport and leakage in super-critical thickness strained silicon directly on insulator MOSFETs with strained Si thickness up to 135 nm
Aberg, I., Cheng, Z., Langdo, T.A., Lauer, I., Lochtefeld, A., Antoniadis, D.A., Hoyt, J.L.
Published in 2005 IEEE International SOI Conference Proceedings (2005)
Published in 2005 IEEE International SOI Conference Proceedings (2005)
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Conference Proceeding
SiGe-On-Insulator (SGOI): substrate preparation and MOSFET fabrication for electron mobility evaluation
Zhi-Yuan Cheng, Currie, M.T., Leitz, C.W., Taraschi, G., Pitera, A., Lee, M.L., Langdo, T.A., Hoyt, J.L., Antoniadis, D.A., Fitzgerald, E.A.
Published in 2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207) (2001)
Published in 2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207) (2001)
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Conference Proceeding
Dislocation engineering in strained mos materials
Fitzgerald, E.A., Lee, M.L., Yu, B., Lee, K.E., Dohrman, C.L., Isaacson, D., Langdo, T.A., Antoniadis, D.A.
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
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Conference Proceeding
Super self-aligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxy
Jong-Ho Lee, Taraschi, G., Andy Wei, Langdo, T.A., Fitzgerald, E.A., Antoniadis, D.A.
Published in International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) (1999)
Published in International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) (1999)
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Conference Proceeding
Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates
Andre, C.L., Khan, A., Gonzalez, M., Hudait, M.K., Fitzgerald, E.A., Carlin, J.A., Currie, M.T., Leitz, C.W., Langdo, T.A., Clark, E.B., Wilt, D.M., Ringel, S.A.
Published in Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002 (2002)
Published in Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002 (2002)
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Conference Proceeding
DC and RF characterization of fully depleted strained SOI MOSFETs
Chen, C.L., Langdo, T.A., Chen, C.K., Fiorenza, J.G., Wyatt, P.W., Currie, M.T., Leitz, C.W., Braithwaite, G., Fritze, M., Lambert, R., Yost, D.-R., Cheng, Z., Lochtefeld, A., Keast, C.K.
Published in 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573) (2004)
Published in 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573) (2004)
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Conference Proceeding