Amorphouslike density of gap states in single-crystal pentacene
Lang, D V, Chi, X, Siegrist, T, Sergent, A M, Ramirez, A P
Published in Physical review letters (20.08.2004)
Published in Physical review letters (20.08.2004)
Get more information
Journal Article
Bias-dependent generation and quenching of defects in pentacene
Lang, D V, Chi, X, Siegrist, T, Sergent, A M, Ramirez, A P
Published in Physical review letters (13.08.2004)
Published in Physical review letters (13.08.2004)
Get more information
Journal Article
Defect dominated charge transport in amorphous Ta2O5 thin films
Fleming, R. M., Lang, D. V., Jones, C. D. W., Steigerwald, M. L., Murphy, D. W., Alers, G. B., Wong, Y.-H., van Dover, R. B., Kwo, J. R., Sergent, A. M.
Published in Journal of applied physics (15.07.2000)
Published in Journal of applied physics (15.07.2000)
Get full text
Journal Article
High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy
Manfra, M. J., Weimann, N. G., Hsu, J. W. P., Pfeiffer, L. N., West, K. W., Syed, S., Stormer, H. L., Pan, W., Lang, D. V., Chu, S. N. G., Kowach, G., Sergent, A. M., Caissie, J., Molvar, K. M., Mahoney, L. J., Molnar, R. J.
Published in Journal of applied physics (01.07.2002)
Published in Journal of applied physics (01.07.2002)
Get full text
Journal Article
Field dependent emission rates in radiation damaged GaAs
Fleming, R. M., Myers, S. M., Wampler, W. R., Lang, D. V., Seager, C. H., Campbell, J. M.
Published in Journal of applied physics (07.07.2014)
Published in Journal of applied physics (07.07.2014)
Get full text
Journal Article
Material and electrical characterization of carbon-doped Ta2O5 films for embedded dynamic random access memory applications
Chu, K., Chang, J. P., Steigerwald, M. L., Fleming, R. M., Opila, R. L., Lang, D. V., Van Dover, R. B., Jones, C. D. W.
Published in Journal of applied physics (01.01.2002)
Published in Journal of applied physics (01.01.2002)
Get full text
Journal Article
Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures
HSU, J. W. P, MANFRA, M. J, LANG, D. V, BALDWIN, K. W, PFEIFFER, L. N, MOLNAR, R. J
Published in Journal of electronic materials (01.03.2001)
Published in Journal of electronic materials (01.03.2001)
Get full text
Journal Article
Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy
HSU, J. W. P, LANG, D. V, RICHTER, S, KLEIMAN, R. N, SERGENT, A. M, LOOK, D. C, MOLNAR, R. J
Published in Journal of electronic materials (01.03.2001)
Published in Journal of electronic materials (01.03.2001)
Get full text
Journal Article
Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability
KOPF, R. F, HAMM, R. A, RYAN, R. W, BURM, J, TATE, A, CHEN, Y.-K, GEORGIOU, G, LANG, D. V, REN, F
Published in Journal of electronic materials (01.08.1998)
Published in Journal of electronic materials (01.08.1998)
Get full text
Journal Article
Effects of defect clustering in neutron irradiated silicon
Seager, C.H., Fleming, R.M., Lang, D.V., Cooper, P.J., Bielejec, E., Campbell, J.M.
Published in Physica. B, Condensed matter (15.12.2007)
Published in Physica. B, Condensed matter (15.12.2007)
Get full text
Journal Article
Gain and defect bi-stability in radiation damaged silicon bipolar transistors
Fleming, R.M., Seager, C.H., Lang, D.V., Bielejec, E., Campbell, J.M.
Published in Physica. B, Condensed matter (15.12.2007)
Published in Physica. B, Condensed matter (15.12.2007)
Get full text
Journal Article
Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications
Kopf, R.F, Hamm, R.A, Malik, R.J, Ryan, R.W, Burm, J, Tate, A, Chen, Y.-K, Georgiou, G, Lang, D.V, Geva, M, Ren, F
Published in Solid-state electronics (01.12.1998)
Published in Solid-state electronics (01.12.1998)
Get full text
Journal Article
Study of electron traps in n -GaAs grown by molecular beam epitaxy
Lang, D. V., Cho, A. Y., Gossard, A. C., Ilegems, M., Wiegmann, W.
Published in Journal of applied physics (01.06.1976)
Published in Journal of applied physics (01.06.1976)
Get full text
Journal Article