Process and device performance of a high-speed double poly-Si bipolar technology using borosenic-poly process with coupling-base implant
Yamaguchi, T., Yu, Y.-C.S., Lane, E.E., Lee, J.S., Patton, E.E., Herman, R.D., Ahrendt, D.R., Drobny, V.F., Yuzuriha, T.H., Garuts, V.E.
Published in IEEE transactions on electron devices (01.08.1988)
Published in IEEE transactions on electron devices (01.08.1988)
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