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Published in IEEE transactions on electron devices (01.11.2010)
Published in IEEE transactions on electron devices (01.11.2010)
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The Influence of TiN Thickness and Si02 Formation Method on the Structural and Electrical Properties of TiN/HfO2/SiO2 Gate Stacks
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Published in IEEE transactions on electron devices (2009)
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Published in IEEE transactions on electron devices (2009)
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The Influence of TiN Thickness and \hbox Formation Method on the Structural and Electrical Properties of \hbox/ \hbox/\hbox Gate Stacks
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Published in IEEE transactions on electron devices (01.07.2009)
Published in IEEE transactions on electron devices (01.07.2009)
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