Deposit Formation in the Evaporator of a Sulfuric Acid Recovery Plant for TiO2 Pigment Production
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Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes
Tinjod, F., de Mierry, P., Lancefield, D., Bougrioua, Z., Laügt, S., Tottereau, O., Lorenzini, P., Chenot, S., Virey, E., Kokta, M.R., Stone-Sundberg, J.L., Pauwels, D.
Published in Journal of crystal growth (15.12.2005)
Published in Journal of crystal growth (15.12.2005)
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Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy
di Forte-Poisson, M.A, Huet, F, Romann, A, Tordjman, M, Lancefield, D, Pereira, E, Di Persio, J, Pecz, B
Published in Journal of crystal growth (01.12.1998)
Published in Journal of crystal growth (01.12.1998)
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Electron Transport in MOVPE GaN Grown on Silicon Nitride Treated Sapphire
Eshghi, H., Lancefield, D., Beaumont, B., Gibart, P.
Published in physica status solidi (b) (01.11.1999)
Published in physica status solidi (b) (01.11.1999)
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Quantum-Well and Cavity-Mode Resonance Effects in a Vertical-Cavity Surface-Emitting Laser Structure, Observed by Photoreflectance Using Hydrostatic Pressure and Temperature Tuning
Vicente, P. M. A., Thomas, P. J. S., Lancefield, D., Sale, T. E., Hosea, T. J. C., Adams, A. R., Klar, P. J., Raymond, A.
Published in physica status solidi (b) (01.01.1999)
Published in physica status solidi (b) (01.01.1999)
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The light-hole mass in a strained InGaAs/GaAs single quantum well and its pressure dependence
Lancefield, D., Adams, A.R., Meney, A.T., Knap, W., Litwin-Staszewska, E., Skierbiszewski, C., Robert, J.L.
Published in The Journal of physics and chemistry of solids (01.03.1995)
Published in The Journal of physics and chemistry of solids (01.03.1995)
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Non-destructive characterisation of (Ga,In,Al,As,P)-based ternary multilayer structures using spectroscopic ellipsometry
Pickering, C., Garawal, N.S., Lancefield, D., Piel, J.P., Blunt, R.
Published in Applied surface science (02.06.1991)
Published in Applied surface science (02.06.1991)
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Growth and characterization of relaxed epilayers of InGaAs on GaAs
Dunstan, D.J., Dixon, R.H., Kidd, P., Howard, L.K., Wilkinson, V.A., Lambkin, J.D., Jeynes, C., Halsall, M.P., Lancefield, D., Emeny, M.T., Goodhew, P.J., Homewood, K.P., Sealy, B.J., Adams, A.R.
Published in Journal of crystal growth (01.02.1993)
Published in Journal of crystal growth (01.02.1993)
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Pressure dependence of light-hole transport in strained InGaAs/GaAs
Lancefield, D., Batty, W., Crookes, C.G., O'Reilly, E.P., Adams, A.R., Homewood, K.P., Sundaram, G., Nicholas, R.J., Emeny, M., Whitehouse, C.R.
Published in Surface science (01.04.1990)
Published in Surface science (01.04.1990)
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High-purity InP and the role of hydrogen
Glew, R W, Adams, A R, Crookes, C G, Greene, P D, Holmes, S N, Kitching, S A, Klipstein, P C, Lancefield, D, Stradling, R A, Woolley, R A
Published in Semiconductor science and technology (01.11.1991)
Published in Semiconductor science and technology (01.11.1991)
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The effect of the X conduction band minima on resonant tunnelling and charge build-up in double barrier structures based on n-GaAs/(AlGa)As
Foster, T.J., Leadbeater, M.L., Maude, D.K., Alves, E.S., Eaves, L., Henini, M., Hughes, O.H., Celeste, A., Portal, J.C., Lancefield, D., Adams, A.R.
Published in Solid-state electronics (1989)
Published in Solid-state electronics (1989)
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