TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
Lomenzo, Patrick D., Takmeel, Qanit, Zhou, Chuanzhen, Fancher, Chris M., Lambers, Eric, Rudawski, Nicholas G., Jones, Jacob L., Moghaddam, Saeed, Nishida, Toshikazu
Published in Journal of applied physics (07.04.2015)
Published in Journal of applied physics (07.04.2015)
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Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74
Fares, Chaker, Kneiß, Max, von Wenckstern, Holger, Grundmann, Marius, Tadjer, Marko, Ren, Fan, Lambers, Eric, Pearton, S. J.
Published in APL materials (01.07.2019)
Published in APL materials (01.07.2019)
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Measurement of band offsets in Y2O3/InGaZnO4 heterojunctions
Park, Jong Cheon, Kim, Kyeong-Won, Gila, Brent P, Lambers, Eric S, Norton, David P, Pearton, Stephen J, Ren, Fan, Kim, Jin Kon, Cho, Hyun
Published in Journal of nanoscience and nanotechnology (01.11.2014)
Published in Journal of nanoscience and nanotechnology (01.11.2014)
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Luminescent zero-dimensional organic metal halide hybrids with near-unity quantum efficiency
Zhou, Chenkun, Lin, Haoran, Tian, Yu, Yuan, Zhao, Clark, Ronald, Chen, Banghao, van de Burgt, Lambertus J, Wang, Jamie C, Zhou, Yan, Hanson, Kenneth, Meisner, Quinton J, Neu, Jennifer, Besara, Tiglet, Siegrist, Theo, Lambers, Eric, Djurovich, Peter, Ma, Biwu
Published in Chemical science (Cambridge) (21.01.2018)
Published in Chemical science (Cambridge) (21.01.2018)
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Journal Article
Band Offsets in Dielectric/InGaZnO4 Heterojunctions
Cho, Hyun, Kim, Kyeong-Won, Douglas, Erica A., Gila, Brent P., Craciun, Valentin, Lambers, Eric S., Norton, David P, Ren, Fan, Pearton, S. J.
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3
Fares, Chaker, Ren, F., Lambers, Eric, Hays, David C., Gila, B. P., Pearton, S. J.
Published in Journal of electronic materials (15.03.2019)
Published in Journal of electronic materials (15.03.2019)
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Functionalizing Zn- and O-terminated ZnO with thiols
Sadik, Patrick W., Pearton, Stephen J., Norton, David P., Lambers, Eric, Ren, Fan
Published in Journal of applied physics (15.05.2007)
Published in Journal of applied physics (15.05.2007)
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Journal Article
Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3
Fares, Chaker, Ren, F, Lambers, Eric, Hays, David C, Gila, B P, Pearton, S J
Published in Semiconductor science and technology (10.01.2019)
Published in Semiconductor science and technology (10.01.2019)
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Journal Article
Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al 0.14 Ga 0.86 ) 2 O 3
Fares, Chaker, Ren, F, Lambers, Eric, Hays, David C, Gila, B P, Pearton, S J
Published in Semiconductor science and technology (01.02.2019)
Published in Semiconductor science and technology (01.02.2019)
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Journal Article
Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65
Fares, Chaker, Kneiß, Max, von Wenckstern, Holger, Tadjer, Marko, Ren, Fan, Lambers, Eric, Grundmann, Marius, Pearton, S. J.
Published in ECS journal of solid state science and technology (01.01.2019)
Published in ECS journal of solid state science and technology (01.01.2019)
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Journal Article
Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
Fares, Chaker, Ren, F., Lambers, Eric, Hays, David C., Gila, B. P., Pearton, S. J.
Published in ECS journal of solid state science and technology (01.01.2018)
Published in ECS journal of solid state science and technology (01.01.2018)
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Journal Article
Luminescent zero-dimensional organic metal halide hybrids with near-unity quantum efficiencyElectronic supplementary information (ESI) available. CCDC 1497737, 1580794 and 1538293. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c7sc04539e
Zhou, Chenkun, Lin, Haoran, Tian, Yu, Yuan, Zhao, Clark, Ronald, Chen, Banghao, van de Burgt, Lambertus J, Wang, Jamie C, Zhou, Yan, Hanson, Kenneth, Meisner, Quinton J, Neu, Jennifer, Besara, Tiglet, Siegrist, Theo, Lambers, Eric, Djurovich, Peter, Ma, Biwu
Year of Publication 17.01.2018
Year of Publication 17.01.2018
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Luminescent zero-dimensional organic metal halide hybrids with near-unity quantum efficiency† †Electronic supplementary information (ESI) available. CCDC 1497737, 1580794 and 1538293. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c7sc04539e
Zhou, Chenkun, Lin, Haoran, Tian, Yu, Yuan, Zhao, Clark, Ronald, Chen, Banghao, van de Burgt, Lambertus J., Wang, Jamie C., Zhou, Yan, Hanson, Kenneth, Meisner, Quinton J., Neu, Jennifer, Besara, Tiglet, Siegrist, Theo, Lambers, Eric, Djurovich, Peter, Ma, Biwu
Published in Chemical science (Cambridge) (21.11.2017)
Published in Chemical science (Cambridge) (21.11.2017)
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Journal Article
Band Alignment of Atomic Layer Deposited SiO 2 and Al 2 O 3 on (Al x Ga 1-x ) 2 O 3 for x = 0.2-0.65
Fares, Chaker, Kneiß, Max, von Wenckstern, Holger, Tadjer, Marko, Ren, Fan, Lambers, Eric, Grundmann, Marius, Pearton, S. J.
Published in ECS journal of solid state science and technology (2019)
Published in ECS journal of solid state science and technology (2019)
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Journal Article
TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO{sub 2} thin films
Lomenzo, Patrick D., Nishida, Toshikazu, Takmeel, Qanit, Zhou, Chuanzhen, Fancher, Chris M., Jones, Jacob L., Lambers, Eric, Rudawski, Nicholas G., Moghaddam, Saeed
Published in Journal of applied physics (07.04.2015)
Published in Journal of applied physics (07.04.2015)
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Journal Article
Band Offsets in Dielectric/InGaZnO 4 Heterojunctions
Cho, Hyun, Kim, Kyeong-Won, Douglas, Erica A., Gila, Brent P., Craciun, Valentin, Lambers, Eric S., Norton, David P, Ren, Fan, Pearton, S. J.
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article