Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor
Dzuba, J, Vanko, G, Dr ík, M, Rýger, I, Vallo, M, Kutiš, V, Haško, D, Choleva, P, Lalinský, T
Published in Journal of micromechanics and microengineering (01.01.2015)
Published in Journal of micromechanics and microengineering (01.01.2015)
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Journal Article
Mutual compatibility of AlGaN HEMT and HTS (YBCO) technology
Chromik, Š, Lalinský, T, Dobro ka, E, Gierlowski, P, Štrbík, V, Dujavová, A, Španková, M
Published in Superconductor science & technology (01.03.2012)
Published in Superconductor science & technology (01.03.2012)
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Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane
Edwards, M. J., Le Boulbar, E. D., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C. R., Allsopp, D. W. E.
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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Journal Article
Some peculiarities at preparation of Bi4Ti3O12 films for bolometric applications
Chromik, Š., Španková, M., Talacko, M., Dobročka, E., Lalinský, T.
Published in Applied surface science (15.12.2018)
Published in Applied surface science (15.12.2018)
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LSMO thin films with high metal-insulator transition temperature on buffered SOI substrates for uncooled microbolometers
CHROMIK, Š, STRBIK, V, CHOLEVA, P, DOBROCKA, E, ROCH, T, ROSOVA, A, SPANKOVA, M, LALINSKY, T, VANKO, G, LOBOTKA, P, RALBOVSKY, M
Published in Applied surface science (01.09.2014)
Published in Applied surface science (01.09.2014)
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Conference Proceeding
Journal Article
Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment
Babchenko, O., Dzuba, J., Lalinský, T., Vojs, M., Vincze, A., Ižák, T., Vanko, G.
Published in Applied surface science (15.02.2017)
Published in Applied surface science (15.02.2017)
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The improved performance of GaAs micromachined power sensor microsystem
Lalinský, T, Haščı́k, Š, Mozolová, Ž, Burian, E, Držı́k, M
Published in Sensors and actuators. A, Physical (30.08.1999)
Published in Sensors and actuators. A, Physical (30.08.1999)
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Conference Proceeding
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide
Gregušová, D, Stoklas, R, Čičo, K, Lalinský, T, Kordoš, P
Published in Semiconductor science and technology (01.08.2007)
Published in Semiconductor science and technology (01.08.2007)
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Journal Article
Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor
Le Boulbar, E.D., Edwards, M.J., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C.R., Allsopp, D.W.E.
Published in Sensors and actuators. A. Physical. (01.05.2013)
Published in Sensors and actuators. A. Physical. (01.05.2013)
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Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation
Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J.
Published in Applied surface science (15.10.2013)
Published in Applied surface science (15.10.2013)
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Journal Article
Thermo-mechanical analysis of uncooled La0.67Sr0.33MnO3 microbolometer made on circular SOI membrane
Lalinský, T., Dzuba, J., Vanko, G., Kutiš, V., Paulech, J., Gálik, G., Držík, M., Chromik, Š., Lobotka, P.
Published in Sensors and actuators. A. Physical. (01.10.2017)
Published in Sensors and actuators. A. Physical. (01.10.2017)
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Journal Article
Thermal actuation of a GaAs cantilever beam
Lalinský, T, Burian, E, Drzík, M, Hascík, S, Mozolová, Z, Kuzmík, J
Published in Journal of micromechanics and microengineering (01.06.2000)
Published in Journal of micromechanics and microengineering (01.06.2000)
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Journal Article
Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device
Lalinský, T., Hudek, P., Vanko, G., Dzuba, J., Kutiš, V., Srnánek, R., Choleva, P., Vallo, M., Držík, M., Matay, L., Kostič, I.
Published in Microelectronic engineering (01.10.2012)
Published in Microelectronic engineering (01.10.2012)
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Conference Proceeding
Piezoelectric response of AlGaN/GaN-based circular-HEMT structures
Lalinský, T., Držík, M., Vanko, G., Vallo, M., Kutiš, V., Bruncko, J., Haščík, Š., Jakovenko, J., Husák, M.
Published in Microelectronic engineering (01.08.2011)
Published in Microelectronic engineering (01.08.2011)
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Conference Proceeding
Coplanar waveguides supported by InGaP and GaAs/AlGaAs membrane-like bridges
Lalinský, T, Drzík, M, Tomáska, M, Krnác, M, Hascík, S, Mozolová, Z, Klasovitý, M, Kostic, I
Published in Journal of micromechanics and microengineering (01.07.2002)
Published in Journal of micromechanics and microengineering (01.07.2002)
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Conference Proceeding
Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor
Lalinský, T., Vanko, G., Vallo, M., Držík, M., Bruncko, J., Jakovenko, J., Kutiš, V., Rýger, I., Haščík, Š., Husák, M.
Published in Sensors and actuators. A. Physical. (01.12.2011)
Published in Sensors and actuators. A. Physical. (01.12.2011)
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Journal Article
C-V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures
OSVALD, J, LALINSKY, T, VANKO, G, HASCIK, S, VINCZE, A
Published in Applied surface science (01.12.2010)
Published in Applied surface science (01.12.2010)
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C-V characterization of SF6 plasma treated AlGaN/GaN heterostructures
OSVAID, J, LALINSKY, T, VANKO, G, HASCIK, S, VINCZE, A
Published in Microelectronic engineering (01.11.2010)
Published in Microelectronic engineering (01.11.2010)
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