A Polar Modulator Using Self-Oscillating Amplifiers and an Injection-Locked Upconversion Mixer
Laflere, W., Steyaert, M.S.J., Craninckx, J.
Published in IEEE journal of solid-state circuits (01.02.2008)
Published in IEEE journal of solid-state circuits (01.02.2008)
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Journal Article
A quantitative analysis of capacitance peaks in the impedance of Al/SiOx/p-Si tunnel diodes
Depas, M, Meirhaeghe, R L Van, Laflere, W H, Cardon, F
Published in Semiconductor science and technology (01.12.1992)
Published in Semiconductor science and technology (01.12.1992)
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Journal Article
Characterisation of CoSi2/- and TiSi2/n-GaAs Schottky barriers
Everaert, J L, Meirhaeghe, R L Van, Laflere, W H, Cardon, F
Published in Semiconductor science and technology (01.01.1990)
Published in Semiconductor science and technology (01.01.1990)
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Journal Article
Sputter-induced damage in Al/n-GaAs and Al/p-GaAs Schottky barriers
Vandenbroucke, D A, Meirhaeghe, R L van, Laflere, W H, Cardon, F
Published in Semiconductor science and technology (01.05.1987)
Published in Semiconductor science and technology (01.05.1987)
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Journal Article
On the influence of a thin thermal oxide layer on MIS-type GaP Schottky diode behaviour
Kabushemeye, E, Meirhaeghe, R L Van, Laflere, W H, Cardon, F
Published in Semiconductor science and technology (01.07.1989)
Published in Semiconductor science and technology (01.07.1989)
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Journal Article
Hydrogen passivation caused by “soft” sputter etch cleaning of Si
Vercaemst, A.S, Van Meirhaeghe, R.L, Laflere, W.H, Cardon, F
Published in Solid-state electronics (01.05.1995)
Published in Solid-state electronics (01.05.1995)
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Journal Article
The influence of Se co-evaporation on the electroluminescent properties of SrS:Ce thin films
Poelman, D., Van Meirhaeghe, R.L., Laflère, W.H., Cardon, F.
Published in Journal of luminescence (01.06.1992)
Published in Journal of luminescence (01.06.1992)
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Journal Article
On the influence of the surface pretreatment of a Si substrate on cobalt silicide formation
Laere, A L De, Meirhaeghe, R L Van, Laflere, W H, Cardon, F
Published in Semiconductor science and technology (01.07.1990)
Published in Semiconductor science and technology (01.07.1990)
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Journal Article
Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation
DEPAS, M, VAN MEIRHAEGHE, R. L, LAFLERE, W. H, CARDON, F
Published in Solid-state electronics (01.03.1994)
Published in Solid-state electronics (01.03.1994)
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Journal Article
On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/ p−Si contacts
Vercaemst, A.S., Van Meirhaeghe, R.L., Laflère, W.H., Cardon, F., De Bosscher, W., Schreutelkamp, R.J.
Published in Solid State Electronics (01.05.1993)
Published in Solid State Electronics (01.05.1993)
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Book Review
Journal Article
Titanium silicide/ p-Si Schottky barriers formed by rapid thermal processing in nitrogen
De Bosscher, W., Van Meirhaeghe, R.L., Laflère, W.H., Cardon, F.
Published in Solid-state electronics (01.08.1991)
Published in Solid-state electronics (01.08.1991)
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Journal Article
Characteristics of the RuO2-n-GaAs Schottky barrier
Vandenbroucke, D A, Meirhaeghe, R L van, Laflere, W H, Cardon, F
Published in Journal of physics. D, Applied physics (01.01.1985)
Published in Journal of physics. D, Applied physics (01.01.1985)
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Journal Article