Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications
Said, N., Harrouche, K., Medjdoub, F., Labat, N., Tartarin, J.G., Malbert, N.
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations
Faqir, M., Bouya, M., Malbert, N., Labat, N., Carisetti, D., Lambert, B., Verzellesi, G., Fantini, F.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Journal Article
Conference Proceeding
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress
Brunel, L., Lambert, B., Mezenge, P., Bataille, J., Floriot, D., Grünenpütt, J., Blanck, H., Carisetti, D., Gourdel, Y., Malbert, N., Curutchet, A., Labat, N.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Conference Proceeding
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements
Karboyan, S., Tartarin, J.G., Rzin, M., Brunel, L., Curutchet, A., Malbert, N., Labat, N., Carisetti, D., Lambert, B., Mermoux, M., Romain-Latu, E., Thomas, F., Bouexière, C., Moreau, C.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Conference Proceeding
Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow
Aubert, A., Jacques, S., Pétremont, S., Labat, N., Frémont, H.
Published in Microelectronics and reliability (01.09.2011)
Published in Microelectronics and reliability (01.09.2011)
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Conference Proceeding
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test
Lambert, B., Labat, N., Carisetti, D., Karboyan, S., Tartarin, J.G., Thorpe, J., Brunel, L., Curutchet, A., Malbert, N., Latu-Romain, E., Mermoux, M.
Published in Microelectronics and reliability (01.09.2012)
Published in Microelectronics and reliability (01.09.2012)
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Journal Article
Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques
Ben Naceur, W., Malbert, N., Labat, N., Frémont, H., Carisetti, D., Clément, J.-C., Muraro, J.-L., Bonnet, B.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Conference Proceeding
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs
Faqir, M., Verzellesi, G., Fantini, F., Danesin, F., Rampazzo, F., Meneghesso, G., Zanoni, E., Cavallini, A., Castaldini, A., Labat, N., Touboul, A., Dua, C.
Published in Microelectronics and reliability (01.09.2007)
Published in Microelectronics and reliability (01.09.2007)
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Conference Proceeding
Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses
Koné, G.A., Grandchamp, B., Hainaut, C., Marc, F., Maneux, C., Labat, N., Zimmer, T., Nodjiadjim, V., Riet, M., Godin, J.
Published in Microelectronics and reliability (01.09.2011)
Published in Microelectronics and reliability (01.09.2011)
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Conference Proceeding
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques
Bouya, M., Malbert, N., Labat, N., Carisetti, D., Perdu, P., Clément, J.C., Lambert, B., Bonnet, M.
Published in Microelectronics and reliability (01.08.2008)
Published in Microelectronics and reliability (01.08.2008)
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Conference Proceeding
Preliminary results of storage accelerated aging test on InP/InGaAs DHBT
Koné, G.A., Grandchamp, B., Hainaut, C., Marc, F., Maneux, C., Labat, N., Zimmer, T., Nodjiadjim, V., Godin, J.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Journal Article
Conference Proceeding
Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC
Bouya, M., Carisetti, D., Malbert, N., Labat, N., Perdu, P., Clément, J.C., Bonnet, M., Pataut, G.
Published in Microelectronics and reliability (01.09.2007)
Published in Microelectronics and reliability (01.09.2007)
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Conference Proceeding
Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing
Aubert, A., Rebrassé, J.P., Dantas de Morais, L., Labat, N., Frémont, H.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Conference Proceeding
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements
Sozza, A., Curutchet, A., Dua, C., Malbert, N., Labat, N., Touboul, A.
Published in Microelectronics and reliability (01.09.2006)
Published in Microelectronics and reliability (01.09.2006)
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Journal Article
Conference Proceeding
Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor
Maneux, C., Belhaj, M., Grandchamp, B., Labat, N., Touboul, A.
Published in Solid-state electronics (01.06.2005)
Published in Solid-state electronics (01.06.2005)
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Journal Article
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions
Ismail, N., Malbert, N., Labat, N., Touboul, A., Muraro, J.L., Brasseau, F., Langrez, D.
Published in Microelectronics and reliability (01.09.2005)
Published in Microelectronics and reliability (01.09.2005)
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Conference Proceeding
Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors
LABAT, N, MALBERT, N, MANEUX, C, TOUBOUL, A
Published in Microelectronics and reliability (01.09.2004)
Published in Microelectronics and reliability (01.09.2004)
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Conference Proceeding
On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise
GRANDCHAMP, B, MANEUX, C, LABAT, N, TOUBOUL, A, ZIMMER, T
Published in Microelectronics and reliability (01.09.2004)
Published in Microelectronics and reliability (01.09.2004)
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Conference Proceeding
Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates
Curutchet, A., Malbert, N., Labat, N., Touboul, A, Gaquière, C., Minko, A., Uren, M.
Published in Microelectronics and reliability (01.09.2003)
Published in Microelectronics and reliability (01.09.2003)
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