Reduction of stacking faults in (11$ bar 2 $0) and (11$ bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission
Bougrioua, Z., Laügt, M., Vennéguès, P., Cestier, I., Gühne, T., Frayssinet, E., Gibart, P., Leroux, M.
Published in Physica status solidi. A, Applications and materials science (01.01.2007)
Published in Physica status solidi. A, Applications and materials science (01.01.2007)
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Journal Article
Conference Proceeding
Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy
Chauveau, J.-M., Buell, D.A., Laügt, M., Vennéguès, P., Teisseire-Doninelli, M., Berard-Bergery, S., Deparis, C., Lo, B., Vinter, B., Morhain, C.
Published in Journal of crystal growth (01.04.2007)
Published in Journal of crystal growth (01.04.2007)
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Journal Article
Conference Proceeding
Growth and characterization of A-plane ZnO and ZnCoO based heterostructures
Chauveau, J.-M., Morhain, C., Lo, B., Vinter, B., Vennéguès, P., Laügt, M., Buell, D., Tesseire-Doninelli, M., Neu, G.
Published in Applied physics. A, Materials science & processing (01.07.2007)
Published in Applied physics. A, Materials science & processing (01.07.2007)
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Journal Article
AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(1 1 1)
Cordier, Y., Semond, F., Hugues, M., Natali, F., Lorenzini, P., Haas, H., Chenot, S., Laügt, M., Tottereau, O., Vennegues, P., Massies, J.
Published in Journal of crystal growth (01.05.2005)
Published in Journal of crystal growth (01.05.2005)
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Journal Article
Conference Proceeding
Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction
Drakopoulos, M., Laügt, M., Riemann, T., Beaumont, B., Gibart, P.
Published in Physica status solidi. B. Basic research (01.06.2006)
Published in Physica status solidi. B. Basic research (01.06.2006)
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Journal Article
Conference Proceeding
GaN epitaxial growth on sapphire (0 0 0 1): the role of the substrate nitridation
Grandjean, N., Massies, J., Martinez, Y., Vennéguès, P., Leroux, M., Laügt, M.
Published in Journal of crystal growth (01.07.1997)
Published in Journal of crystal growth (01.07.1997)
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Journal Article
Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy
Chauveau, J-M, Laügt, M, Venneguès, P, Teisseire, M, Lo, B, Deparis, C, Morhain, C, Vinter, B
Published in Semiconductor science and technology (01.03.2008)
Published in Semiconductor science and technology (01.03.2008)
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Journal Article
Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy
Joblot, S., Semond, F., Natali, F., Vennéguès, P., Laügt, M., Cordier, Y., Massies, J.
Published in Physica status solidi. C (01.05.2005)
Published in Physica status solidi. C (01.05.2005)
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Journal Article
Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (1 1 1)
Lahrèche, H, Vennéguès, P, Tottereau, O, Laügt, M, Lorenzini, P, Leroux, M, Beaumont, B, Gibart, P
Published in Journal of crystal growth (01.07.2000)
Published in Journal of crystal growth (01.07.2000)
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Journal Article
Strain and microstructure in Fe-doped GaN layers grown by low pressure metalorganic vapour phase epitaxy
Azize, M., Leroux, M., Laugt, M., Gibart, P., Bougrioua, Z.
Published in Physica status solidi. A, Applications and materials science (01.05.2006)
Published in Physica status solidi. A, Applications and materials science (01.05.2006)
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Journal Article
Conference Proceeding
Ordering in undoped hexagonal AlxGa1-xN grown on sapphire (0001) with 0.09 < x < 0.247
Laügt, M., Bellet-Amalric, E., Ruterana, P., Omnès, F.
Published in Physica Status Solidi (b) (01.04.2003)
Published in Physica Status Solidi (b) (01.04.2003)
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Journal Article
An X-ray and TEM study of inhomogeneous ordering in AlxGa1-xN layers grown by MOCVD
LAÜGT, M, BELLET-AMALRIC, E, RUTERANA, P, OMNES, F
Published in The Journal of physics and chemistry of solids (01.09.2003)
Published in The Journal of physics and chemistry of solids (01.09.2003)
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Conference Proceeding
Journal Article
Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction
Drakopoulos, M., Laügt, M., Riemann, T., Beaumont, B., Gibart, P.
Published in Physica Status Solidi (b) (01.06.2006)
Published in Physica Status Solidi (b) (01.06.2006)
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Journal Article
Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy
Tournié, E., Vigué, F., Laügt, M., Faurie, J.-P.
Published in Journal of crystal growth (01.03.2001)
Published in Journal of crystal growth (01.03.2001)
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Journal Article
Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers
Lahrèche, H, Vennéguès, P, Vaille, M, Beaumont, B, Laügt, M, Lorenzini, P, Gibart, P
Published in Semiconductor science and technology (01.11.1999)
Published in Semiconductor science and technology (01.11.1999)
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Journal Article
Characterization by X-ray diffraction and electron microscopy of GaInAs and GaAsN single layers and quantum wells grown on GaAs
Varlet, H, Curtil, C, Alfonso, C, Burle, N, Arnoult, A, Fontaine, C, Laügt, M
Published in Physica. E, Low-dimensional systems & nanostructures (01.07.2004)
Published in Physica. E, Low-dimensional systems & nanostructures (01.07.2004)
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