Spatial characterization of localized charge trapping and charge redistribution in the NROM device
Shappir, Assaf, Levy, David, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz
Published in Solid-state electronics (01.09.2004)
Published in Solid-state electronics (01.09.2004)
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Journal Article
Lateral charge transport in the nitride layer of the NROM non-volatile memory device
Shappir, Assaf, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz
Published in Microelectronic engineering (01.04.2004)
Published in Microelectronic engineering (01.04.2004)
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Journal Article
Conference Proceeding
Characterization of channel hot electron injection by the subthreshold slope of NROM[trademark] device
Lusky, E, Shacham-Diamand, Y, Bloom, I, Eitan, B
Published in IEEE electron device letters (01.11.2001)
Published in IEEE electron device letters (01.11.2001)
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Journal Article
Electrons retention model for localized charge in oxide-nitride-oxide (ONO) dielectric
Lusky, E., Shacham-Diamand, Y., Bloom, I., Eitan, B.
Published in IEEE electron device letters (01.09.2002)
Published in IEEE electron device letters (01.09.2002)
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Journal Article